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Identifying interfacial properties and discussing optical properties of antimony‐based type II superlattices are the key factors for developing high performance of infrared optoelectronic devices. Herein, the multi‐epitaxy‐layered structure of a mid‐wavelength‐responsive infrared detector with an InAs/InAsSb superlattice as an active area layer is grown and investigated. High‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, and the geometric phase analysis indicate epitaxial layers of high crystalline quality and small lattice mismatches. The electric field results obtained by differential phase contrast scanning transmission electron microscopy further confirm the sharp interface states and good periodic structure of the as‐grown samples. The photoluminescence spectrum shows that the photoluminescence signal center is 5.4 μm at 75 K, even at 320 K, the sample still maintains a photoluminescence signal of 6.2 μm. [ABSTRACT FROM AUTHOR]

Fabrication and Characterization of an InAs(Sb)/InxGa1-xAsySb1-y Type-II Superlattice A novel InAs(Sb)/In SB I x i sb Ga SB 1- I x i sb As SB I y i sb Sb SB 1- I y i sb superlattice with high-indium-content In SB I x i sb Ga SB 1- I x i sb As SB I y i sb Sb SB 1- I y i sb in the immiscibility gap has been designed and fabricated through the fractional monolayer alloy growth method by Peng Du et al. (article number 1900474). Compared to the InAs/GaSb superlattice, this neoteric superlattice InAs(Sb)/In SB I x i sb Ga SB 1- I x i sb As SB I y i sb Sb SB 1- I y i sb exhibits a flexible miniband engineering ability and high luminescence property, which would have great potential applications in infrared optoelectronic devices. [Extracted from the article]