1. Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique.
- Author
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Li, Shiming, Wu, Mei, Yang, Ling, Hou, Bin, Zhang, Meng, Chang, Qingyuan, Ma, Xiaohua, and Hao, Yue
- Abstract
In order to achieve high‐performance gallium nitride (GaN) high‐electron‐mobility‐transistors (HEMTs) capable of operating in the X‐band, a bilayer passivation technique is employed. The technique involves creating a stacked passivation layer consisting of a 20‐nm Si‐rich silicon nitride (Si
x N) passivation layer and a 100‐nm N‐rich silicon nitride (Si3N4) passivation layer. This effectively reduces radio frequency scattering in GaN HEMTs without compromising the breakdown voltage (BV). On the one hand, the Six N passivation layer effectively suppresses the surface states of devices, resulting in low current collapse. On the other hand, the Si3N4 passivation layer can effectively reduce gate leakage caused by the Six N passivation layer, allowing the device to reliably operate at higher voltages. Consequently, a GaN HEMTs with Six N/Si3N4 bilayer passivation achieve a low current collapse of 5% and a high BV of 157 V. The device features a current gain cutoff frequency (f T) and maximum oscillation frequency (f max) of 57.9 and 96.8 GHz, respectively. Additionally, it exhibits excellent radio frequency performance in the X‐band, with an output power density (P out) of 13.7 W mm−1 and power added efficiency of 60.8% at a drain voltage (V D) bias of 50 V. [ABSTRACT FROM AUTHOR]- Published
- 2024
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