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The photogalvanic effect (PGE) generated under linearly polarized light irradiation has remarkable applications in 2D nanodevices. The PGE of 2D WS2/Mo2CF2 van der Waals (vdW) heterostructure can generate photocurrent and high sensitivity to polarized light. However, the PGE has less photogenerated current. On this basis, the photocurrent transport mechanism of PGE under low bias voltage is investigated. The results show that the photocurrent of the photon energy has cos2θ, sin2θ and sin2θ dependence on the polarization angle θ under the considered external bias voltage. Under a bias voltage of 1.0 V, the maximum photocurrent of 3.7 eV photon energy in the zigzag direction can reach 4.61. Under a bias voltage of 1 V, the maximum photocurrent of 1.8 eV photon energy in the armchair direction can reach 6.71. The maximum photocurrents are in the order of 10−1 for both zigzag and armchair directions with 0 V bias. Furthermore, 2D WS2/Mo2CF2 vdW heterostructure has a stable and high extinction ratio. These results show that 2D WS2/Mo2CF2 vdW heterostructure is a potential candidate material for future optoelectronics in the visible light region. [ABSTRACT FROM AUTHOR]