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We employed first-principles calculations to investigate the thermoelectric transport properties of the compound As2Se3. Early experiments and calculations have indicated that these properties are controlled by a kind of native defect called antisites. Our calculations using the linearized Boltzmann transport equation within the relaxation time approximation show good agreement with the experiments for defect concentrations of the order of 1019 cm−3. Based on our total energy calculations, we estimated the equilibrium concentration of antisite defects to be about 1014 cm−3. These results suggest that the large concentration of defects in the experiments is due to kinetic and/or off-stoichiometry effects and in principle it could be lowered, yielding relaxation times similar to those found in other chalcogenide compounds. In this case, for relaxation time higher than 10 fs, we obtained high thermoelectric figures of merit of 3 for the p-type material and 2 for the n-type one. [ABSTRACT FROM AUTHOR]

Efficient ab initio computational methods for the calculation of the thermoelectric transport properties of materials are of great interest for energy harvesting technologies. The constant relaxation time approximation (CRTA) has been largely used to efficiently calculate thermoelectric coefficients. However, CRTA usually does not hold for real materials. Here we go beyond the CRTA by incorporating realistic k-dependent relaxation time models of the temperature dependence of the main scattering processes, namely, screened polar and nonpolar scattering by optical phonons, scattering by acoustic phonons, and scattering by ionized impurities with screening. Our relaxation time models are based on a smooth Fourier interpolation of Kohn–Sham eigenvalues and its derivatives, taking into account non-parabolicity (beyond the parabolic or Kane models), degeneracy and multiplicity of the energy bands on the same footing, within very low computational cost. In order to test our methodology, we calculated the anisotropic thermoelectric transport properties of the low temperature phase (Pnma) of intrinsic p-type and hole-doped tin selenide (SnSe). Our results are in quantitative agreement with experimental data, regarding the evolution of the anisotropic thermoelectric coefficients with both temperature and chemical potential. Hence, from this picture, we also obtained the evolution and understanding of the main scattering processes of the overall thermoelectric transport in p-type SnSe. [ABSTRACT FROM AUTHOR]

An ultralow lattice thermal conductivity of 0.14 W m−1 K−1 along the b  axis of As2Se3 single crystals was obtained at 300 K using first-principles calculations involving density functional theory and the resolution of the Boltzmann transport equation. This ultralow lattice thermal conductivity arises from the combination of two mechanisms: (1) a cascade-like fall of the low-lying optical modes, which results in avoided crossings of these with the acoustic modes, low sound velocities and increased scattering rates of the acoustic phonons; and (2) the repulsion between the lone-pair electrons of the As cations and the valence p orbitals of the Se anions, which leads to an increase in the anharmonicity of the bonds. The physical origins of these mechanisms lie in the nature of the chemical bonding in the material and its strong anisotropy. These results, whose validity has been addressed by comparison with SnSe, for which excellent agreement between the theoretical predictions and the experiments is achieved, point out that As2Se3 could exhibit improved thermoelectric properties. [ABSTRACT FROM AUTHOR]

Subnanometric transition-metal (TM) clusters have attracted great attention due to their unexpected physical and chemical properties, leastwise compared to their bulk counterparts. An in-depth understanding of the evolution of the properties as a function of the number of atoms for such systems is a basic prerequisite to leverage countless applications, from catalysis to magnetic storage, as well as to answer fundamental questions related to their intrinsic stability. Here, we reported a systematic density functional study to investigate the structural, electronic properties and stability of all TMn (30 elements) unary clusters as a function of the number of atoms (n = 2–15). We provided the complete structural patterns for all TM periodic table groups, considering the growth evolution as well as the main trends of the structural and electronic properties. The combination of the occupation of the bonding/anti-bonding d-states and the s–d hybridization is found to be the main stabilization mechanism, helping in the understanding of the structural patterns. Most TMn clusters have a magic number of atoms, for which there are peaks in s–d hybridization and null electric dipole moments. Thus, our extensive and comparative study addresses size effects along with the evolution of d-orbital occupation for the TMn gas-phase cluster properties. [ABSTRACT FROM AUTHOR]