1. Ba2IrO4: A spin-orbit Mott insulating quasi-two-dimensional antiferromagnet.
- Author
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Okabe, H., Isobe, M., Takayama-Muromachi, E., Koda2,3, A., Takeshita, S., Hiraishi, M., Miyazaki, M., Kadono, R., Miyake, Y., and Akimitsu, J.
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ANTIFERROMAGNETISM , *FERROMAGNETISM , *ELECTRICAL resistivity , *ELECTRIC insulators & insulation , *PHYSICS - Abstract
A layered iridate Ba2IrO4 was synthesized using a high-pressure synthesis technique. Its electronic state was studied through electrical resistivity, magnetic susceptibility, and μSR experiments. It was found that Ba2IrO4 crystallizes in a K2NiF4-type structure (space group I4/mmm) with lattice parameters a =4.030(1) Å and c =13.333(4) Å. The structure includes flat IrO2 square planar lattices with straight Ir-O-Ir bonds. Ba2IrO4 is a Mott insulator (activation energy ΔEa ∼ 0.07 eV) driven by a spin-orbit interaction. The magnetic susceptibility and μSR studies revealed that the magnetic ground state is antiferromagnetic long-range order (TN ∼ 240 K) in which the magnetic moment (∼0.34μB/Ir atom) is significantly reduced by a low-dimensional quantum spin fluctuation with a large intraplane correlation ∣J∣. The behavior is similar to that in parent materials of high-TC cuprate superconductors such as La2CuO4. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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