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We report an angle-resolved photoemission spectroscopy study of a ThCr2Si2-type superconductor YFe2Ge2 (Tc ≈ 1.8 K) in the normal state. The resolved low-energy band structure mainly consists of several flat Fe bands, while the renormalization factors of different bands range from 1.1 to 2.8. Around the Fermi level, these bands contribute to a high density of states, which may account for the unusually high Sommerfeld coefficient Y. Besides, a 30 meV kink is observed, which is probably induced by electron-phonon interactions. Our results indicate that YFe2Ge2 is a moderately correlated compound, while electron-phonon coupling should be taken into account to better understand its properties. [ABSTRACT FROM AUTHOR]

Heavy-fermion systems share some of the strange metal phenomenology seen in other unconventional superconductors, providing a unique opportunity to set strange metals in a broader context. Central to understanding heavy-fermion systems is the interplay of localization and itinerancy. These materials acquire high electronic masses and a concomitant Fermi volume increase as the f electrons delocalize at low temperatures. However, despite the wide-spread acceptance of this view, a direct microscopic verification has been lacking. Here we report high-resolution angle-resolved photoemission measurements on CeCoIn5, a prototypical heavy-fermion compound, which spectroscopically resolve the development of band hybridization and the Fermi surface expansion over a wide temperature region. Unexpectedly, the localized-to-itinerant transition occurs at surprisingly high temperatures, yet f electrons are still largely localized even at the lowest temperature. These findings point to an unanticipated role played by crystal-field excitations in the strange metal behavior of CeCoIn5. Our results offer a comprehensive experimental picture of the heavy-fermion formation, setting the stage for understanding the emergent properties, including unconventional superconductivity, in this and related materials. [ABSTRACT FROM AUTHOR]

Using resonant angle-resolved photoemission spectroscopy and electron band-structure calculations, we explore the electronic structure and properties of Sm atoms at the surface and in the bulk of the antiferromagnet SmRh2Si2. We show that the Sm atoms reveal weak mixed-valent behavior both in the bulk and at the surface. Although trivalent 4f emission strongly dominates, a small divalent 4f signal near the Fermi energy can be clearly resolved for surface and bulk Sm atoms. This behavior is quite different to most other Sm-based materials which typically experience a surface valence transition to a divalent state of Sm atoms at the surface. This phenomenon is explained in analogy to the isostructural Ce compound, where strong 4f hybridization stabilizes mixed-valent ground state both in the bulk and at the surface, and which were described in the light of the single-impurity Anderson model. Implications for other RERh2Si2 (RE = rare-earth elements) compounds are discussed. [ABSTRACT FROM AUTHOR]

PtBi2 with a layered hexagonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high-resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real composition of samples. We find significant electron doping in PtBi2, implying a substantial Bi-deficiency-induced disorder therein. Intriguingly, we discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude linear band dispersion in the quantum limit as the cause of the unconventional large linear magnetoresistance but give support to the classical disorder model from the perspective of the electronic structure. [ABSTRACT FROM AUTHOR]