37 results on '"Joyce, J. J."'
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2. Electronic structure andf-orbital occupancy in Yb-substituted CeCoIn5
3. Spectral properties ofδ-plutonium: Sensitivity to5foccupancy
4. Comparison of bulk-sensitive spectroscopic probes of Yb valence in Kondo systems
5. Angle-resolved photoemission study of dispersive and narrow-band5fstates in UAsSe
6. Angle-resolved photoemission study ofUSb2: The5fband structure
7. Comment on “Photoemission experiments onYbInCu4:Surface effects and temperature dependence”
8. Bulk electronic structure ofYbInCu4from photoemission: A unique test of the single impurity model
9. Electronic structure of α- and δ-Pu from photoelectron spectroscopy
10. Strongly correlated electron systems: Photoemission and the single-impurity model
11. Photoelectron spectroscopy of strongly correlated Yb compounds
12. Momentum-dependent effects in 4fphotoemission spectra from strongly correlatedCeBe13
13. Evidence for possible 4fbands atT≫TKin the heavy-fermion single crystalCePt2+x
14. Valence-band photoemission and Auger-line-shape study ofAuxPd1−x
15. Temperature-invariant valence-band 4fphotoemission features in the heavy-fermion compoundYbAl3
16. Photoemission spectra ofCeAl3,CeBe13,CeSi2, andCeCu2Si2: Weights and widths of the 4femission features
17. Band-bending model for the ideal Bi/InP(110) interface
18. Fermi-surface topology ofYBa2Cu3Oxwith varied oxygen stoichiometry: A photoemission study
19. Electronic structure nearEFinYBa2Cu3Oxfor 6.35≤x≤6.9: A photoemission study
20. Photoemission study of the development of the Ti/GaAs(110) interface
21. Core-level binding-energy shifts, thermodynamic predictions, and morphologies for metal-Si and metal-Ge interfaces
22. Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In onYBa2Cu3O6.9
23. Chemical bonding in ordered Ce overlayers on Si(111)
24. Disruption, segregation, and passivation for Pd and noble-metal overlayers on YBa2Cu3O6.9
25. High-resolution photoemission study of Co/Si(111) interface formation
26. Growth morphology and electronic structure of the Bi/GaAs(110) interface
27. 4fphotoemission from Ce clusters and disordered reaction products at Ce/Si and Ce/GaAs interfaces
28. Asymmetries in atomic intermixing at Au/Ge and Ge/Au interfaces
29. Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers
30. Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation
31. Adatom aggregation, reaction, and chemical trapping at the Sm/GaAs(110) interface
32. Soft-x-ray photoemission study of Cr-Ge intermixing on crystalline and amorphous Ge surfaces
33. Cluster formation and atomic intermixing at the reactive V/Ge(111) interface
34. Reactions at a rare-earth–GaAs interface: Ce/GaAs(110)
35. Comparative study of the formation of Cr/Ge and Ge/Cr thin-film interfaces
36. Interdiffusion and reaction at the Fe/GaAs(110) interface
37. Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82)
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