10 results on '"Lefebvre I"'
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2. Electronic structure of binary and ternary Ga or As oxides.
3. Erratum: Tin oxidation number and the electronic structure of SnS-In2S3-SnS2 systems
4. Tin oxidation number and the electronic structure of SnS-In2S3-SnS2 systems.
5. Electronic structure of semiconductor oxides: InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3.
6. Band structure of CsSnBr3.
7. Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system.
8. Theoretical Mössbauer isomer shift of antimony chalcogenides.
9. Tight-binding prediction of tetrahedral semiconductor ionization potentials.
10. Role of dangling bonds at Schottky barriers and semiconductor heterojunctions.
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