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We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

Terahertz absorption in waveguides loaded with InAs/AlSb super-superlattice mesas reveals a frequency dependent crossover from loss to gain that is related to the Stark ladder produced by an applied dc electric field. Electric field domains appear to be suppressed in the super-superlattice composed of many very short segments of superlattice, interrupted by heavily doped InAs regions. Resonant crossover is indicated by an increase in terahertz transmission as the Stark splitting or Bloch frequency determined by the applied dc electric field exceeds the measurement frequency.