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International audience; Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co=Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based on hot electron ballistic transport implemented within a microscopic model that accounts for local dissipation of angular momentum nicely reproduce the experimental results, ruling out contribution of pure thermal transport.

In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge limited devices by device physics. We prove analytically and numerically that in the case of bipolar conduction with an Ohmic majority carrier and an injection limited minority carrier contact, a decrease in minority carrier mobility may give rise to an increase in the device current. It is shown that when the magnetic field acts to decrease the mobility of both carriers, a sign change in the magnetoconductivity as a function of applied bias may result. This behavior is in agreement with experimental observations.

Boron-doped $\mathrm{Si}\mathrm{\text{\ensuremath{-}}}{\mathrm{SiO}}_{2}\mathrm{\text{\ensuremath{-}}}\mathrm{Al}$ structures are fabricated to study extremely large magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior, dominated by an autocatalytic process of impact ionization. At low temperatures, the magnetic field postpones the onset of impact ionization to higher electric fields. This results in a symmetric positive MR of over 10 000% at $400\text{ }\text{ }\mathrm{kA}/\mathrm{m}$. Applying a magnetic field leads to an increase of the acceptor level compared to the valence band as deduced by admittance spectroscopy. A macroscopic transport model is introduced to describe how the MR is controlled by voltage, electrode spacing, and oxide thickness.

We investigate a recent controversy in ultrafast magnetization dynamics by comparing the demagnetization rates from two frequently used but competing descriptions for finite temperature magnetism, namely a rigid band structure Stoner-like approach and a system of localized spins. The calculations on the localized spin system show a demagnetization rate and time comparable to experimentally obtained values, whereas the rigid band approach yields negligible demagnetization, even when the microscopic spin-flip process is assumed to be instantaneous. This shows that rigid band structure calculations will never be in quantitative agreement with experiments, irrespective of the investigated microscopic scattering mechanism.

We have observed a longitudinal nonlinear (second-harmonic) Kerr rotation up to 22\ifmmode^\circ\else\textdegree\fi{} for an Fe(2 nm)/Cr(2 nm) multilayer on an Si${\mathrm{O}}_{2}$ substrate that shows a linear Kerr rotation of only a few hundreths of a degree. The latter value excludes any linearly induced mechanism and confirms the interface sensitivity of this nonlinear Kerr technique. The enormous enhancement is shown to be in good agreement with recent predictions, based on spin dependent band structure calculations. The local optical field effects are shown to play an important role for the additional enhancements for such multilayers on a substrate.

We explore the magnetoelectroluminescence (MEL) of organic light-emitting diodes by evaluating the magnetic-field dependent fraction of singlet excitons formed. We use two- and multisite polaron-hopping models with spin mixing by hyperfine fields and different singlet and triplet exciton formation rates k(S) and k(T). A huge MEL is predicted when exciton formation is in competition with spin mixing and when k(T) is significantly larger than k(S). This competition also leads to a low-field structure in the MEL that is in agreement with recent experiments.

We demonstrate that a part of interface at a subsurface nanocavity in Cu(110) can efficiently induce electron scattering back to the surface even if it is inclined with respect to the surface, if the condition for electron diffraction is fulfilled. This backscattering induces oscillations of electron local density of states at the surface versus electron energy. In agreement with our model calculations, the diffraction is assigned to a specific atomic structure at the interface, and is found to be significantly enhanced by focussing of electron waves for propagation along the [110] direction.

We present a theory for spin diffusion in disordered organic semiconductors, based on incoherent hopping of a charge carrier and coherent precession of its spin in an effective magnetic field, composed of the random hyperfine field of hydrogen nuclei and an applied magnetic field. From Monte Carlo simulations and an analysis of the waiting-time distribution of the carrier we predict a surprisingly weak temperature dependence, but a considerable magnetic-field dependence of the spin-diffusion length. We show that both predictions are in agreement with experiments on organic spin valves.

Apparent c(2×2) superstructures within the narrow beams of an interference pattern spreading in the 100 directions at the surface of Cu(001) are observed by scanning tunneling microscopy. These features are induced by electron scattering from Ar- and Ne-filled subsurface nanocavities. The beams originate from electron anisotropy resulting in focusing of bulk electrons. We developed a model providing a good agreement between simulations and experiments. Particularly, a simple explanation of the angular distribution for the interference pattern and the period in the superstructure is found. © 2009 The American Physical Society.

We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (${\mathrm{Alq}}_{3}$), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The transition from negative to positive magnetoresistance (MR) is found to be accompanied by an increase in slope of $\mathrm{log} (I)$ versus $\mathrm{log} (V)$. ac admittance measurements show this transition coincides with the onset of minority charge (hole) injection in the device. All these observations are consistent with two simultaneous contributions with opposite sign of MR, which may be assigned to holes and electrons having different magnetic field responses.

We present a mechanism for the recently discovered magnetoresistance in disordered $\ensuremath{\pi}$-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

A novel, all-optical method to excite and detect spin waves in magnetic materials is presented. By exploiting the temperature dependence of the magnetic anisotropy, an ultrashort laser pulse is efficiently converted in a picosecond "anisotropy field" pulse that triggers a coherent precession of the magnetization. Recording the temporal evolution of the precessing spins by a time-delayed probe-pulse provides a quantitative method to study locally the magnetic anisotropy, as well as switching and damping phenomena in micromagnetic structures. Applications to nickel and permalloy ( Ni80Fe20) films are discussed, particularly showing the possibility to explore standing spin waves in thin films.

Several magnetic and optical processes contribute to the magneto-optical response of nickel thin films after excitation by a femtosecond laser pulse. We achieved a first complete identification by explicitly measuring the time-resolved Kerr ellipticity and rotation, as well as its temperature and magnetic field dependence in epitaxially grown (111) and (001) oriented Cu/Ni/Cu wedges. The first hundreds of femtoseconds the response is dominated by state filling effects. The true demagnetization takes approximately 0.5-1 ps. At the longer (sub-ns) time scales the spins are found to precess in their anisotropy field. Simple and transparent models are introduced to substantiate our interpretation.

Paulo V. Santos,1 B. Koopmans,1 N. Esser,2 W. G. Schmidt,3 and F. Bechstedt3 1Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Federal Republic of Germany 2Institut fur Festkorperphysik, TU-Berlin, Hardenbergstrasse 36, D-10623 Berlin, Federal Republic of Germany 3Institut fur Festkorpertheorie und Theoretische Optik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, D-07743 Jena, Federal Republic of Germany (Received 12 April 1996)

We provide compelling evidence to establish that, contrary to one's elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of highly textured fcc CoFeB. First principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the predicted s-electron spin polarization. Given the disordered structure of the ternary alloy, not only do these results strongly endorse our communal understanding of tunneling through AlOx, but they also portray the key concepts that demand primary consideration in such complex systems., Comment: To be published in Physical Review Letters. 5 double-column pages with 3 figures