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It is widely believed that the mechanism for spin pumping in ferromagnet-nonmagnet bilayers is the exchange interaction between the ferromagnet and nonmagnetic material. We observe 1000-fold exponential decay of spin pumping from thin Y3Fe5O12 films to Pt across insulating barriers, from which exponential decay lengths of 0.16, 0.19, and 0.23 nm are extracted for oxide barriers having band gaps of 4.91, 3.40, and 2.36 eV, respectively. This archetypal signature of quantum tunneling through a barrier underscores the importance of exchange coupling for spin pumping and reveals its dependence on the characteristics of the barrier material.

Binary ferromagnetic Mn(3-delta)Ga (1.23-deltaor =1.5) crystalline thin films have been epitaxially grown on wurtzite GaN(0001) surfaces using rf N-plasma molecular beam epitaxy. The film structure is face-centered tetragonal with CuAu type-I (L1(0)) ordering with (111) orientation. The in-plane epitaxial relationship to GaN is nearly ideal with [110](MnGa) parallel[1100](GaN) and [112](MnGa) parallel[1120](GaN). We observe magnetic anisotropy along both the in-plane and out-of-plane directions. The magnetic moments are found to depend on the Mn/(Mn+Ga) flux ratio and can be controlled by observation of the surface reconstruction during growth, which varies from 1x1 to 2x2 with increasing Mn stoichiometry.

Andreev reflection at a Pb/CrO(2) point contact has been used to determine the spin polarization of single-crystal CrO(2) films made by chemical vapor deposition. The spin polarization is found to be 0.96 +/- 0.01, which confirms that CrO(2) is a half-metallic ferromagnet, as theoretically predicted.