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The topography and the electronic structure of $\mathrm{InAsP}/\mathrm{InP}$ quantum dots are probed by cross-sectional scanning tunneling microscopy and spectroscopy. The study of the local density of states in such large quantum dots confirms the discrete nature of the electronic levels whose wave functions are measured by differential conductivity mapping. Because of their large dimensions, the energy separation between the discrete electronic levels is low, allowing for quantization in both the lateral and growth directions as well as the observation of the harmonicity of the dot lateral potential.

A novel metal-coated nanocylinder-cavity architecture fully compatible with III-V GaInAs technology and benefiting from a broad spectral range enhancement of the local density of states is proposed as an integrated source of nonclassical light. Because of a judicious selection of the mode volume, the cavity combines good collection efficiency ($\ensuremath{\approx}45%$), large Purcell factors ($\ensuremath{\approx}15$) over a 80 nm spectral range, and a low sensitivity to inevitable spatial mismatches between the single emitter and the cavity mode. This represents a decisive step towards the implementation of reliable solid-state devices for the generation of entangled photon pairs at infrared wavelengths.

Photonic wires are the simplest extended low-dimensional systems. Photonic crystal confinement confers them a divergent density of states at zero-group-velocity points, which leads to enhancement of spontaneous emission rates [D. Kleppner, Phys. Rev. Lett. 47, 233 (1981)10.1103/Phys. Rev. Lett. 47.233]. We experimentally evidence, for the first time, the spectral signature of these Purcell factor singularities, using the out-of-plane emission of InAs quantum dots buried in GaAs/AlGaAs based photonic crystal based wire. Additionally, in-plane collection at the wire exit shows large enhancements of the signal at some of the density of states singularities.