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We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO(3). The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO(3)-based oxide interface systems.

A 10  MeV/c positive muon beam was stopped in helium gas of a few mbar in a magnetic field of 5 T. The muon "swarm" has been efficiently compressed from a length of 16 cm down to a few mm along the magnetic field axis (longitudinal compression) using electrostatic fields. The simulation reproduces the low energy interactions of slow muons in helium gas. Phase space compression occurs on the order of microseconds, compatible with the muon lifetime of 2  μs. This paves the way for the preparation of a high-quality low-energy muon beam, with an increase in phase space density relative to a standard surface muon beam of 10^{7}. The achievable phase space compression by using only the longitudinal stage presented here is of the order of 10^{4}.

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.