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In elemental bismuth, 10(5) atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the nonoscillating background. When the first Landau level attains the Fermi energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. These features are yet to be understood. We note a qualitative agreement with a theory invoking current-carrying edge excitations.

We present a study of electric, thermal, and thermoelectric transport in elemental bismuth, which presents a Nernst coefficient much larger than what was found in correlated metals. We argue that this is due to the combination of an exceptionally low carrier density with a very long electronic mean-free path. The low thermomagnetic figure of merit is traced to the lightness of electrons. Heavy-electron semimetals, which keep a metallic behavior in the presence of a magnetic field, emerge as promising candidates for thermomagnetic cooling at low temperatures.

Spectral analysis of the Shubnikov-de Haas magnetoresistance oscillations and the quantum Hall effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHEs for bilayer and single-layer graphenes take place simultaneously in HOPG samples.

The quantum de Haas-van Alphen (dHvA) and Shubnikov-de Haas oscillations measured in graphite were decomposed by pass-band filtering onto contributions from three different groups of carriers. Generalizing the theory of dHvA oscillations for 2D carriers with an arbitrary spectrum and by detecting the oscillation frequencies using a method of two-dimensional phase-frequency analysis which we developed, we identified these carriers as (i) minority holes having a 2D parabolic massive spectrum p(2)(perpendicular)/2m(perpendicular), (ii) massive majority electrons with a 3D spectrum and (iii) majority holes with a 2D Dirac-like spectrum +/-vp(perpendicular) which seems to be responsible for the unusual strongly-correlated electronic phenomena in graphite.