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2. Publisher’s Note: Chemical-Potential-Dependent Gap Opening at the Dirac Surface States ofBi2Se3Induced by Aggregated Substitutional Cr Atoms [Phys. Rev. Lett. 112, 056801 (2014)]

3. Chemical-Potential-Dependent Gap Opening at the Dirac Surface States ofBi2Se3Induced by Aggregated Substitutional Cr Atoms

7. Efficient Method for Prediction of Metastable or Ground Multipolar Ordered States and Its Application in Monolayer α-RuX_{3} (X=Cl, I).

8. Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.

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