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Isomer spectroscopy of heavy neutron-rich nuclei beyond the N=126 closed shell has been performed for the first time at the Radioactive Isotope Beam Factory of the RIKEN Nishina Center. New millisecond isomers have been identified at low excitation energies, 985.3(19) keV in ^{213}Tl and 874(5) keV in ^{215}Tl. The measured half-lives of 1.34(5) ms in ^{213}Tl and 3.0(3) ms in ^{215}Tl suggest spins and parities 11/2^{-} with the single proton-hole configuration πh_{11/2} as leading component. They are populated via E1 transitions by the decay of higher-lying isomeric states with proposed spin and parity 17/2^{+}, interpreted as arising from a single πs_{1/2} proton hole coupled to the 8^{+} seniority isomer in the ^{A+1}Pb cores. The lowering of the 11/2^{-} states is ascribed to an increase of the πh_{11/2} proton effective single-particle energy as the second νg_{9/2} orbital is filled by neutrons, owing to a significant reduction of the proton-neutron monopole interaction between the πh_{11/2} and νg_{9/2} orbitals. The new ms isomers provide the first experimental observation of shell evolution in the almost unexplored N>126 nuclear region below doubly magic ^{208}Pb.

The new isotope ^{241}U was synthesized and systematic atomic mass measurements of nineteen neutron-rich Pa-Pu isotopes were performed in the multinucleon transfer reactions of the ^{238}U+^{198}Pt system at the KISS facility. The present experimental results demonstrate the crucial role of the multinucleon transfer reactions for accessing unexplored neutron-rich actinide isotopes toward the N=152 shell gap in this region of nuclides.

The atomic masses of ^{55}Sc, ^{56,58}Ti, and ^{56-59}V have been determined using the high-precision multireflection time-of-flight technique. The radioisotopes have been produced at RIKEN's Radioactive Isotope Beam Factory (RIBF) and delivered to the novel designed gas cell and multireflection system, which has been recently commissioned downstream of the ZeroDegree spectrometer following the BigRIPS separator. For ^{56,58}Ti and ^{56-59}V, the mass uncertainties have been reduced down to the order of 10 keV, shedding new light on the N=34 shell effect in Ti and V isotopes by the first high-precision mass measurements of the critical species ^{58}Ti and ^{59}V. With the new precision achieved, we reveal the nonexistence of the N=34 empirical two-neutron shell gaps for Ti and V, and the enhanced energy gap above the occupied νp_{3/2} orbit is identified as a feature unique to Ca. We perform new Monte Carlo shell model calculations including the νd_{5/2} and νg_{9/2} orbits and compare the results with conventional shell model calculations, which exclude the νg_{9/2} and the νd_{5/2} orbits. The comparison indicates that the shell gap reduction in Ti is related to a partial occupation of the higher orbitals for the outer two valence neutrons at N=34.

Mass-separated ^{187}Ta_{114} in a high-spin isomeric state has been produced for the first time by multinucleon transfer reactions, employing an argon gas-stopping cell and laser ionization. Internal γ rays revealed a T_{1/2}=7.3±0.9  s isomer at 1778±1  keV, which decays through a rotational band with perturbations associated with the approach to a prolate-oblate shape transition. Model calculations show less influence from triaxiality compared to heavier elements in the same mass region. The isomer-decay reduced E2 hindrance factor f_{ν}=27±1 supports the interpretation that axial symmetry is approximately conserved.

The masses of ^{246}Es, ^{251}Fm, and the transfermium nuclei ^{249-252}Md and ^{254}No, produced by hot- and cold-fusion reactions, in the vicinity of the deformed N=152 neutron shell closure, have been directly measured using a multireflection time-of-flight mass spectrograph. The masses of ^{246}Es and ^{249,250,252}Md were measured for the first time. Using the masses of ^{249,250}Md as anchor points for α decay chains, the masses of heavier nuclei, up to ^{261}Bh and ^{266}Mt, were determined. These new masses were compared with theoretical global mass models and demonstrated to be in good agreement with macroscopic-microscopic models in this region. The empirical shell gap parameter δ_{2n} derived from three isotopic masses was updated with the new masses and corroborates the existence of the deformed N=152 neutron shell closure for Md and Lr.

We investigate the relationship between the Zeeman interaction and the inversion-asymmetry-induced spin-orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in the crossing and anticrossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anticrossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute the independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.

Absolute cross sections for isotopically identified products formed in multinucleon transfer in the (136)Xe+(198)Pt system at ∼8  MeV/nucleon are reported. The isotopic distributions obtained using a large acceptance spectrometer demonstrated the production of the "hard-to-reach" neutron-rich isotopes for Z<78 around the N=126 shell closure far from stability. The main contribution to the formation of these exotic nuclei is shown to arise in collisions with a small kinetic energy dissipation. The present experimental finding corroborates for the first time recent predictions that multinucleon transfer reactions would be the optimum method to populate and characterize neutron-rich isotopes around N=126 which are crucial for understanding both astrophysically relevant processes and the evolution of "magic" numbers far from stability.

We study nuclear spin polarization in the quantum Hall regime through the optically pumped electron spin polarization in the lowest Landau level. The nuclear spin polarization is measured as a nuclear magnetic field B(N) by means of the sensitive resistive detection. We find the dependence of B(N) on the filling factor nonmonotonic. The comprehensive measurements of B(N) with the help of the circularly polarized photoluminescence measurements indicate the participation of the photoexcited complexes, i.e., the exciton and trion (charged exciton), in nuclear spin polarization. On the basis of a novel estimation method of the equilibrium electron spin polarization, we analyze the experimental data and conclude that the filling factor dependence of B(N) is understood by the effect of electron spin polarization through excitons and trions.

Scanning tunneling spectroscopy is used to study the real-space local density of states of a two-dimensional electron system in a magnetic field, in particular within higher Landau levels. By Fourier transforming the local density of states, we find a set of n radial minima at fixed momenta for the nth Landau levels. The momenta of the minima depend only on the inverse magnetic length. By comparison with analytical theory and numerical simulations, we attribute the minima to the nodes of the quantum cyclotron orbits, which decouple in a Fourier representation from the random guiding center motion due to disorder. Adequate Fourier filtering reveals the nodal structure in real space in some areas of the sample with relatively smooth potential disorder.

A method is proposed for obtaining the spectrum for noise that causes the phase decoherence of a qubit directly from experimentally available data. The method is based on a simple relationship between the spectrum and the coherence time of the qubit in the presence of a π pulse sequence. The relationship is found to hold for every system of a qubit interacting with the classical-noise, bosonic, and spin baths., (© 2011 American Physical Society)

We investigate low-frequency electron spin dynamics in a quantum Hall system with wire confinement by nuclear spin relaxation measurements. We developed a technique to measure the local nuclear spin relaxation rate T(1)(-1). T(1)(-1) is enhanced on both sides of the local filling factor ν(wire)=1, reflecting low-frequency fluctuations of electron spins associated with Skyrmions inside the wire. As the wire width is decreased, the fast nuclear spin relaxation is suppressed in a certain range of Skyrmion density. This suggests that the multi-Skyrmion state is modified and the low-frequency spin fluctuations are suppressed by the wire confinement.

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

Spin relaxation of two-dimensional electrons in a GaAs/AlGaAs quantum well was studied by time-resolved Kerr rotation measurements using a two-color pump and probe technique. In quantum Hall ferromagnets, the spin-wave relaxation is strongly influenced by the photogenerated Skyrmion and anti-Skyrmion pairs. By tuning the pump and probe lights to the lowest optical transition, an intrinsic filling factor dependence of spin relaxation is obtained without photogeneration of Skyrmions. The relaxation time of the spin wave presents a sharp peak at odd filling factors, accompanied by dips on both sides of it. The peculiar filling factor dependence of the spin-wave relaxation around quantum Hall ferromagnets can be explained by the interaction between the spin wave and Skyrmion. Observation of a similar feature around ν=1, 3, and 5 may suggest the existence of Skyrmions around higher odd filling factors.

Using scanning tunneling spectroscopy in an ultrahigh vacuum at low temperature (T=0.3 K) and high magnetic fields (B

We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole.

We demonstrate an alternative nuclear spin resonance using a radio frequency (rf) electric field [nuclear electric resonance (NER)] instead of a magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The rf electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The rf power and burst duration dependence of the NER spectrum provides insight into the interplay between nuclear spins and the oscillating domain walls.

An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2(e2/h). At the same time, a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by boundaries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by a numerical simulation at zero magnetic field.

We show that the spin degree of freedom plays a decisive role in the phase diagram of the nu(T)=1 bilayer electron system using an in-plane field B( parallel) in the regime of negligible tunneling. We observe that the phase boundary separating the quantum Hall and compressible states at d/l(B) = 1.90 for B(parallel) = 0 (d: interlayer distance, l(B): magnetic length) steadily shifts with B(parallel) before saturating at d/l(B) = 2.33 when the compressible state becomes fully polarized. Using a simple model for the energies of the competing phases, we can quantitatively describe our results. A new phase diagram as a function of d/l(B) and the Zeeman energy is established and its implications as to the nature of the phase transition are discussed.

We investigate a domain structure of pseudospins, a soliton lattice in the bilayer quantum Hall state at total Landau level filling factor nu = 1, in a tilted magnetic field, where the pseudospin represents the layer degree of freedom. An anomalous peak in the magnetoresistance Rxx appears at the transition point between the commensurate and incommensurate phases. The Rxx at the peak is highly anisotropic for the angle between the in-plain magnetic field B parallel and the current, and indicates a formation of the soliton lattice aligned parallel to B parallel. The temperature dependence of the Rxx peak reveals that the dissipation is caused by thermal fluctuations of pseudospin solitons. We also study a phase diagram of the bilayer nu = 1 system, and the effects of density imbalance between the two layers.

We investigate the electron spin states in the bilayer quantum Hall system at total Landau level filling factor nu=2 exploiting current-pumped and resistively detected NMR. The measured Knight shift, K(S), of 75As nuclei reveals continuous variation of the out-of-plane electronic spin polarization between nearly full and zero as a function of density imbalance. Nuclear spin relaxation measurements indicate a concurrent development of an in-plane spin component. These results provide direct information on the spin configuration in this system and comprise strong evidence for the spin canting suggested by previous experiments.

We report anomalous structure in the magnetoresistance of SiO(2)/Si(100)/SiO(2) quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 (nu=4i) accompanied by suppression on either side of nu=4i. This persists when either the magnetic field or the valley splitting is swept, leading to resistance ridges running along nu=4i. The range of field over which they are observed points to the role of spin degeneracy, which is directly confirmed by their disappearance with the addition of an in-plane magnetic field. The data suggest a new type of many-body effect arising from the combined degeneracy due to the valley and the spin degrees of freedom.

We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.

Spin relaxation from a triplet excited state to a singlet ground state in a semiconductor quantum dot is studied by employing an electrical pump-and-probe method. Spin relaxation occurs via co-tunneling when the tunneling rate is relatively large, confirmed by a characteristic square dependence of the relaxation rate on the tunneling rate. When co-tunneling is suppressed by reducing the tunneling rate, the intrinsic spin relaxation is dominated by spin-orbit interaction. We discuss a selection rule of the spin-orbit interaction based on the observed double-exponential decay of the triplet state.

We show that electron-nuclear spin coupling in semiconductor heterostructures is strongly modified by their potential inversion asymmetry. This is demonstrated in a GaAs quantum well, where we observe that the current-induced nuclear spin polarization at Landau-level filling factor nu=2/3 is completely suppressed when the quantum well is made largely asymmetric with gate voltages. Furthermore, we find that the nuclear spin relaxation rate is also modified by the potential asymmetry. These findings strongly suggest that even a very weak Rashba spin-orbit interaction can play a dominant role in determining the electron-nuclear spin coupling.

The nuclear-spin-relaxation rate 1/T(1) has been measured in a bilayer electron system at and around total Landau level filling factor nu=1. The measured 1/T(1), which probes electron spin fluctuations, is found to increase gradually from the quantum Hall (QH) state at low fields through a phase transition to the compressible state at high fields. Furthermore, 1/T(1) in the QH state shows a noticeable increase away from nu=1. These results demonstrate that, as opposed to common assumption, the electron spin degree of freedom is not completely frozen either in the QH or the compressible states.

We measured the low temperature magnetopiezoresistance of a quasi-one-dimensional electron system by fabricating an InAs/AlGaSb micromechanical cantilever. The magnetopiezoresistance curve showed aperiodic but reproducible oscillation, which was similar to the differential magnetoresistance curve obtained for the same device. A detailed comparison with model calculations strongly suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance are responsible for the peculiar behavior of the magnetopiezoresistance.

We investigate coherent time evolution of charge states (pseudospin qubit) in a semiconductor double quantum dot. This fully tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence mechanisms in the present device are also discussed.

We study the phase diagram of composite fermions (CFs) in the presence of spin and pseudospin degrees of freedom in the bilayer nu=2/3 quantum Hall (QH) state. Activation studies elucidate the existence of three different QH states with two different types of hysteresis in the magnetotransport. While a noninteracting CF model provides a qualitative account of the phase diagram, the observed renormalization of tunneling gap and a non-QH state at high densities are not explained in the noninteracting CF model, and are suggested to be manifestations of interactions between CFs.

We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.

We study interactions between electrons and nuclear spins by using the resistance ( Rxx) peak which develops near the Landau-level filling factor nu = 2/3 as a probe. Temporarily tuning nu to a different value, nu(temp), with a gate demonstrates that the Rxx peak regenerates even after complete depletion ( nu(temp) = 0), while it rapidly relaxes on either side of nu(temp) = 1. This indicates that the nu = 2/3 domain morphology is memorized by the nuclear spins which can be rapidly depolarized by Skyrmions. An additional enhancement in the nuclear spin relaxation around nu = 1/2 and 3/2 suggests a Fermi sea of partially polarized composite fermions.

We study charge excitations in quantum Hall ferromagnets realized in a symmetric quantum well. Landau levels (LLs) with different subband and orbital indices crossing at the Fermi level act as up and down pseudospin levels. The activation energy measured as a function of the pseudospin Zeeman energy, Delta(Z), reveals easy-plane and easy-axis ferromagnetism for LL filling of nu = 3 and 4, respectively, for which the crossing levels have parallel and antiparallel spin. For nu = 4, we observe a sharp reduction in the gap for Delta(Z)-->0, which we discuss in terms of a topological excitation in domain walls akin to Skyrmions.

The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111) A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.