1. Probing of the multilayer Si/SiGe structure with a flux of nonequilibrium acoustic phonons
- Author
-
A. I. Sharkov, A. Yu. Klokov, and T. I. Galkina
- Subjects
Materials science ,Solid-state physics ,Condensed matter physics ,Silicon ,Phonon ,Terahertz radiation ,chemistry.chemical_element ,Substrate (electronics) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,chemistry ,Reflection (physics) ,Anisotropy ,Quantum well - Abstract
The Si/Si0.8Ge0.2/Si double quantum wells grown on a silicon substrate were probed in the reflection geometry with a flux of terahertz nonequilibrium acoustic phonons produced by the heat pulse technique. A comparison of the detected phonon arrival signals with those obtained under similar conditions from a silicon sample without a quantum well structure permits one to isolate the component due to the phonon reflection from quantum wells. This reflected signal was found to be strongly anisotropic.
- Published
- 2009
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