1. Enhanced performance of phototransistor memory by optimizing the block copolymer architectures comprising Polyfluorenes and hydrogen-bonded insulating coils.
- Author
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Lin, Chen-Fu, Wu, Ya-Shuan, Hsieh, Hui-Ching, Chen, Wei-Cheng, Isono, Takuya, Satoh, Toshifumi, Lin, Yan-Cheng, Kuo, Chi-Ching, and Chen, Wen-Chang
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POLYFLUORENES , *PHOTOTRANSISTORS , *FIELD-effect transistors , *MEMORY , *CONJUGATED polymers , *BLOCK copolymers , *HYDROGEN bonding - Abstract
Photonic transistor memory, which adopts the structure of a field-effect transistor, combines optical and electronic principles. Conjugated block copolymers (BCPs) are promising electret materials for optoelectronic applications. In this study, a series of BCPs comprising poly[2,7-(9,9-dioctylfluorene)] (PFO: A block) and poly(n -butyl acrylate- random -2-ureido-4[1H]pyrimidinone acrylate) (n BA- r -UPyA: B block), with linear-diblock (AB), branched (AB 2), and linear-triblock (BAB) architectures, are synthesized to investigate hydrogen bonding effect stemming from UPyA groups. After thermal annealing, the soft segments of BCPs lead to self-assembled arrangements and smoother morphologies, providing an excellent interface for the deposition of the semiconducting channel layer. Furthermore, forming vertical phase-separated structures through thermal annealing significantly enhances the electron-capture capability. Subsequently, the BCP materials are applied in photonic transistor memory and conducted with electrical characterization. Our study reveals that different compositions of BCP architectures have a corresponding impact on the performance of photonic transistor memory devices. Consequently, AB of PFO- b -P(n BA- r -UPyA)s with a linear-diblock architecture presents an outperforming memory ratio of ∼105, outstanding memory stability over 104 s, and durability to consecutive write/erase processes. [Display omitted] • Architectural optimization of conjugated block copolymers. • Polyfluorene-based block copolymers with hydrogen-bonded coils. • Self-assembled arrangements of vertical phase separations. • Photonic transistor memory with a high memory ratio of 105. • Outstanding memory stability over 104 s and durability to consecutive write/erase cycles. [ABSTRACT FROM AUTHOR] more...
- Published
- 2024
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