1. p-type silicon drift detectors: first results
- Author
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G. Odyniec, C.J. Naudet, W. Wilson, B. Krieger, D. Krofcheck, M. Partlan, N.W. Wang, H.W. Rudolph, R. O'Donnell, D. Lewak, and J.T. Walton
- Subjects
Nuclear and High Energy Physics ,Materials science ,Silicon drift detector ,Silicon ,Physics::Instrumentation and Detectors ,business.industry ,Detector ,chemistry.chemical_element ,Electrostatic induction ,Particle detector ,Nuclear Energy and Engineering ,chemistry ,Optoelectronics ,Planar process ,Detectors and Experimental Techniques ,Electrical and Electronic Engineering ,business ,Leakage (electronics) ,Voltage - Abstract
We have fabricated a 4 cm long, position-sensitive silicon drift detector using high purity, p-type silicon as the starting material. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si-SiO/sub 2/ interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and maximize breakdown voltages. Preliminary tests show that a drift signal can be measured across the entire length of the detectors and that the transit time of the holes varies linearly with the position of the induced charge signal. >
- Published
- 2002
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