1. Gamma-ray irradiation induced degradation in ultra-thin silica layers
- Author
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G. Salace, C. Petit, Gérard Sarrabayrouse, and A. Aassime
- Subjects
Materials science ,Fabrication ,business.industry ,Transconductance ,technology, industry, and agriculture ,chemistry.chemical_element ,Ionizing radiation ,Stress (mechanics) ,Condensed Matter::Materials Science ,chemistry ,Aluminium ,Optoelectronics ,Degradation (geology) ,business ,Polarization (electrochemistry) ,Layer (electronics) - Abstract
In this paper, the influence of gamma irradiation (unbiased devices) on the electrical properties of Metal-Oxide-Semiconductor (MOS) devices with an ultra-thin silica layer N/sub 2/O-nitrided or not is investigated. Mainly electron trapping, defects generation and breakdown during electrical stress are studied.
- Published
- 2002
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