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The fabrication process of interdigitated‐back‐contacted silicon heterojunction (IBC‐SHJ) solar cells has been significantly simplified with the development of the so‐called tunnel‐IBC architecture. This architecture utilizes a highly conductive (p)‐type nanocrystalline silicon (nc‐Si:H) layer deposited over the full substrate area comprising pre‐patterned (n)‐type nc‐Si:H fingers. In this context, the (p)‐type nc‐Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc‐Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full‐area molybdenum oxide (MoOx) layer as an alternative to the (p)nc‐Si:H blanket layer. We demonstrate that the use of such a thin MoOx minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)‐type nc‐Si:H/MoOx electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel‐IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof‐of‐concept front/back‐contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm2 is achieved, and fabricated FBC‐SHJ solar cells obtain a fill factor above 81.5% and open‐circuit voltage above 705 mV. Lastly, the IBC‐SHJ solar cells featuring the MoOx blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm2. Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC‐SHJ solar cell architecture. [ABSTRACT FROM AUTHOR]

This work presents a practical approach to designing an optical filter for thermal management for photovoltaic modules. The approach emphasizes the practicality of manufacturing over optical performance. Simulation work demonstrates that, for an interdigitated back contact solar cell architecture, complete rejection of infrared radiation offers limited thermal benefits requiring highly complex optical filter designs. An alternative approach consists of reducing thermalization losses by providing reflectance at lower wavelength values. An optical filter design that fulfills this requirement is possible using simple structures based on two materials and taking advantage of the harmonics present in quarter wavelength optical thickness designs. The filter is later optimized for angular performance via second‐order algorithms, resulting in a device consisting of only 15 thin‐film layers. Performance simulations on two locations, Delft (the Netherlands) and Singapore, estimate a temperature reduction of 2.20°C and 2.45°C, respectively. In a single year, the optical loss produced by the filter is not compensated via temperature reduction. However, improvements in the annual degradation rate show that in Singapore, the overall effect of the filter on the lifetime DC energy yield is positive. This work explores the potential use of practical optical filters for thermal management of photovoltaic modules. Aiming for simplified designs, the temperature reduction is achieved by rejecting light at low and high wavelength values, albeit incurring optical losses. Performance simulation results show that the added optical loss is not compensated by the cooling effect. However, this effect can increase the lifetime of a PV module such that in certain locations, the overall performance effect is positive. [ABSTRACT FROM AUTHOR]

The photovoltaic (PV) module energy rating standard series IEC 61853 does not cover bifacial PV modules. However, the market share of bifacial PV modules has dramatically increased in recent years and is projected to grow. This work demonstrates how Parts 3 and 4 of the IEC 61853 standard could be extended to bifacial modules. First, we develop an irradiance model that uses the data already given in the standard IEC 61853‐4 to calculate the irradiance on the rear side of the module. Second, we propose a way to extend the energy yield calculation algorithm IEC 61853‐3 to include bifacial modules and make it available to the PV community. This rear irradiance and bifacial energy yield calculation procedure is tested using real outdoor measurements for a nine‐month period with a root mean square difference between measured and simulated energy yield of 4.65%. To conclude, we investigate the impact of different climates and normalization on the bifacial module energy rating results. [ABSTRACT FROM AUTHOR]

We formed phosphorous(P)‐ion‐implanted n‐BaSi2 films on p‐Si(111) substrates and demonstrated solar‐cell functionality of the n‐BaSi2/p‐Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 × 1014 cm−2. Subsequent postannealing was conducted at 500°C in Ar for different durations (t = 30–480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary‐ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 ± 0.6 and 2.5 ± 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n‐BaSi2/p‐Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells. [ABSTRACT FROM AUTHOR]

Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short‐circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short‐circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency. [ABSTRACT FROM AUTHOR]

Excellent surface passivation induced by (i)a‐Si:H is critical to achieve high‐efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a‐Si:H deposition temperature on passivation quality and SHJ solar cell performance. At the lower end of temperatures ranging from 140°C to 200°C, it was observed with Fourier‐transform infrared spectroscopy (FTIR) that (i)a‐Si:H films are less dense, thus hindering their surface passivation capabilities. However, with additional hydrogen plasma treatments (HPTs), those (i)a‐Si:H layers deposited at lower temperatures exhibited significant improvements and better passivation qualities than their counterparts deposited at higher temperatures. On the other hand, even though we observed the highest VOCs for cells with (i)a‐Si:H deposited at the lowest temperature (140°C), the related FFs are poorer as compared to their higher temperature counterparts. The optimum trade‐off between VOC and FF for the SHJ cells was found with temperatures ranging from 160°C to 180°C, which delivered independently certified efficiencies of 23.71%. With a further improved p‐layer that enables a FF of 83.3%, an efficiency of 24.18% was achieved. Thus, our study reveals two critical requirements for optimizing the (i)a‐Si:H layers in high‐efficiency SHJ solar cells: (i) excellent surface passivation quality to reduce losses induced by interface recombination and simultaneously (ii) less‐defective (i)a‐Si:H bulk to not disrupt the charge carrier collections. [ABSTRACT FROM AUTHOR]

Single junction crystalline silicon (c‐Si) solar cells are reaching their practical efficiency limit whereas perovskite/c‐Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c‐Si solar cells. Next to low‐thermal budget silicon heterojunction architecture, high‐thermal budget carrier‐selective passivating contacts (CSPCs) based on polycrystalline‐SiOx (poly‐SiOx) also constitute a promising architecture for high efficiency perovskite/c‐Si tandem solar cells. In this work, we present the development of c‐Si bottom cells based on high temperature poly‐SiOx CSPCs and demonstrate novel high efficiency four‐terminal (4T) and two‐terminal (2T) perovskite/c‐Si tandem solar cells. First, we tuned the ultra‐thin, thermally grown SiOx. Then we optimized the passivation properties of p‐type and n‐type doped poly‐SiOx CSPCs. Here, we have optimized the p‐type doped poly‐SiOx CSPC on textured interfaces via a two‐step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively. [ABSTRACT FROM AUTHOR]

Monitoring residential scale photovoltaic (PV) systems is important for maximizing the energy yield and detecting malfunctions. Analytical‐based approaches are not reliable in these systems because of the lack of on‐site measurements and detailed PV system specifications. In this paper, a collaborative approach is proposed which does not depend on weather data but on similar PV systems. Based on the so‐called performance‐to‐peer approach, the aim of this work is to improve this baseline model by adding PV systems characteristics and by optimizing with machine learning techniques. The methodology has been tested in a fleet of more than 12,000 PV systems located in the Netherlands with up to 7 years of data per system. The proposed model achieves an average R2 of 94.1% and a NRMSE of 0.05, outperforming in terms of R2 the baseline model by 1.4 points, and the analytical approach by 3.8. The data requirements of this model are not high: With 1,700 years of PV system data with daily resolution, the maximum performance can be achieved as long as a minimum of 6 months of data per system and 100 PV systems are considered. The application of this model for fault detection and categorization has also been shown. The proposed approach has shown its strengths with respect to other methods through its ability of distinguishing between system mismatch and actual fault and of adapting to new situations via retraining. [ABSTRACT FROM AUTHOR]

Low parasitic absorption and high conductivity enable (n)‐type hydrogenated nanocrystalline silicon [(n)nc‐Si:H], eventually alloyed with oxygen [(n)nc‐SiOx:H], to be deployed as window layer in high‐efficiency silicon heterojunction (SHJ) solar cells. Besides the appropriate opto‐electrical properties of these nanocrystalline films, reduction of their thickness is sought for minimizing parasitic absorption losses. Many strategies proposed so far reveal practical limits of the minimum (n)‐layer thickness that we address and overcome in this manuscript. We demonstrated the successful application of an ultra‐thin layer of only 3‐nm‐thick based on (n)nc‐Si:H PECVD plasma growth conditions without the use of additional contact or buffer layers. For simplicity, we still name (n)nc‐Si:H this ultra‐thin layer and the solar cell endowed with it delivers a certified efficiency η of 22.20%. This cell shows a 0.61 mA/cm2 overall JSC gain over the (n)a‐Si:H counterpart mainly owing to the higher transparency of (n)nc‐Si:H, while maintaining comparable VOC > 714 mV and FF > 80%. Our optimized (n)nc‐Si:H layer yields low absorption losses that are commonly measured for (n)nc‐SiOx:H films. In this way, we are able to avoid the detrimental effect that oxygen incorporation has on the electrical parameters of these functional layers. Further, by applying a MgF2/ITO double‐layer anti‐reflection coating, a cell with 3‐nm‐thick (n)nc‐Si:H exhibits a JSC,EQE up to 40.0 mA/cm2. By means of EDX elemental mapping, we additionally identified the (n)nc‐Si:H/ITO interface as critical for electron transport due to unexpected oxidation. To avoid this interfacial oxidation, insertion of a 2‐nm‐thick (n)a‐Si:H on the 3‐nm‐thick (n)nc‐Si:H contributes to FF gains of 1.4%abs. (FF increased from 78.6% to 80.0%), and showing further room for improvements. [ABSTRACT FROM AUTHOR]

Reducing indium consumption, which is related to the transparent conductive oxide (TCO) use, is a key challenge for scaling up silicon heterojunction (SHJ) solar cell technology to terawatt level. In this work, we developed bifacial SHJ solar cells with reduced TCO thickness. We present three types of In2O3‐based TCOs, tin‐, fluorine‐, and tungsten‐doped In2O3 (ITO, IFO, and IWO), whose thickness has been optimally minimized. These are promising TCOs, respectively, from post‐transition metal doping, anionic doping, and transition metal doping and exhibit different opto‐electrical properties. We performed optical simulations and electrical investigations with varied TCO thicknesses. The results indicate that (i) reducing TCO thickness could yield larger current in both monofacial and bifacial SHJ devices; (ii) our IWO and IFO are favorable for n‐contact and p‐contact, respectively; and (iii) our ITO could serve well for both n‐contact and p‐contact. Interestingly, for the p‐contact, with the ITO thickness reducing from 75 nm to 25 nm, the average contact resistivity values show a decreasing trend from 390 mΩ cm2 to 114 mΩ cm2. With applying 25‐nm‐thick front IWO in n‐contact, and 25‐nm‐thick rear ITO use in p‐contact, we obtained front side efficiencies above 22% in bifacial SHJ solar cells. This represents a 67% TCO reduction with respect to a reference bifacial solar cell with 75‐nm‐thick TCO on both sides. [ABSTRACT FROM AUTHOR]

Building Integrated Photovoltaic systems can produce a significant portion of the energy demand of urban areas. Despite their potential, they remain a niche technology that architects and project engineers still find esthetically limited. The dark blue or black color of standard photovoltaic panels is considered inappropriate for restoration projects of historic buildings and represents a major constraint on the development of new projects. This work will provide insight into how the use of optic filters can offer new pathways for architectural acceptance of photovoltaic panels. Optic filters selectively reflect or transmit light by interference and can be designed and fabricated using cost‐effective and industrially compatible processes. By using in‐house developed ray tracing software coupled with TCAD Sentaurus, more than 400 colors were obtained, and their impact on the opto‐electrical performance of interdigitated back‐contacted solar cells was studied. Results show a maximum efficiency loss of 1.6% absolute at the perpendicular incidence of light on the range of obtained colors when compared with a standard dark blue solar cell. Simulations for different angles of incidence showed that the current reduction on the standard device could be modeled using a cosine relationship. The colored cells, however, deviated significantly from this relationship. We propose that the angular behavior of any cell (colored or standard) could be simulated by modifying the effective irradiance with scaling factors equal to the ratios of the photogenerated current at any angle with respect to the value at normal incidence. We demonstrate that this approach accurately models the effect of the color filter and allows for an easy transition from a bare cell to an encapsulated one. Due to the spectral effect of the filter, we developed both a spectrally resolved optical model and a two‐dimensional finite volume transient thermal model. In case of the optical model, we demonstrate an accuracy in the prediction of the reflectance produced by the color with values of mean bias error (MBE) between 2.0% and 3.9%. As for the thermal model, it was validated by first analyzing a standard model under conditions of nominal operating cell temperature and then comparing its results with published scientific literature. Later, we compare its prediction against 2 weeks of measurements. In both cases the thermal model proves an adequate accuracy, yielding differences below 1.5°C with respect to other scientific works and an MBE value of 0.89°C as well as a root‐mean‐square error value of 2.10°C for the entire measurement period. With the validated models, we studied the effect of the encapsulation on the color perception. We present two options of color filters. The first one produces relatively low reflectance losses and presents relative annual direct current (DC) energy losses of up to 6.4% for Delft, in the Netherlands, and up to 5.9% for Alice Springs in Australia. However, this first option has very poor color brightness. The second studied filter produces highly saturated bright colors. Improving brightness can increase the annual DC relative losses up to 13.7% and 13.5% for Delft and Alice Springs, respectively. Overall, we demonstrate that colored filters based on multilayer optical stacks are a versatile option for coloring cells that allow a good compromise between esthetics and performance. [ABSTRACT FROM AUTHOR]

Crystalline silicon solar cells with passivating contacts based on doped poly‐Si exhibit high optical parasitic losses. Aiming at minimizing these losses, we developed the oxygen‐alloyed poly‐Si (poly‐SiOx) as suitable material for passivating contacts. From passivation point of view, poly‐SiOx layers show excellent passivation quality and carrier selectivity for both n‐type (iVOC,flat = 740 mV, contact resistance ρc = 0.7 mΩ/cm2, iVOC,textured = 723 mV) and p‐type (iVOC,flat = 709 mV, ρc = 0.5 mΩ/cm2). Optically, due to the incorporation of oxygen, the absorption coefficient of poly‐SiOx becomes much lower than that of doped poly‐Si at long wavelength. Both n‐type and p‐type poly‐SiOx layers are concurrently deployed in front/back‐contacted (FBC) solar cells with a front indium tin oxide (ITO) layer to facilitate the lateral transport of carriers and minimize cell's reflection. A high cell FF of 83.5% obtained in double‐side flat FBC solar cell indicates an efficient carrier collection by these passivating contacts. An active‐area cell efficiency of 21.0% featuring JSC,EQE = 39.7 mA/cm2 is obtained in front‐side textured poly‐SiOx FBC cell, with the potential of further improvement in both VOC and FF. The optical advantage of poly‐SiOx over poly‐Si as passivating contact is also observed with a 19.7% interdigitated back‐contacted (IBC) solar cell endowed with poly‐SiOx emitter and back surface field. Compared to the reference 23.0% IBC solar cell with poly‐Si passivating contacts, the one based on poly‐SiOx passivating contacts shows higher IQE at wavelengths above 1100 nm. This indicates that for both FBC and IBC cells, poly‐SiOx passivating contacts hold potential in enhancing the cell JSC by maximizing the cell spectral response. [ABSTRACT FROM AUTHOR]

Photovoltaic (PV) technology has the potential to be integrated on many surfaces in various environments, even on water. Modeling, design, and realization of a floating PV system have more challenges than conventional rooftop or freestanding PV system. In this work, we introduce two innovative concepts for floating bifacial PV systems, describing their modeling, design, and performance monitoring. The developed concepts are retractable and enable maximum energy production through tracking the Sun. Various floating PV systems (monofacial, bifacial with and without reflectors) with different tilts and tracking capabilities are installed on a Dutch pond and are being monitored. Results of the thermal study showed that partially soaking the frame of PV modules into water does not bring a considerable additional yield (+0.17%) and revealed that floating PV modules experience higher temperature special variance compared with land‐based systems. Observations showed that the birds' presence has a severe effect on floating PV performance in the short term. Electrical yield investigation concluded that due to low albedo of inland water areas (~6.5%), bifacial PV systems must have reflectors. One‐year monitoring showed that a bifacial PV system with reflector and horizontal tracking delivers ~17.3% more specific yield (up to 29% in a clear‐sky month) compared with a monofacial PV system installed on land. Ecological monitoring showed no discernable impacts on the water quality in weekly samplings but did show significant impacts on the aquatic plant biomass and periods of low oxygen concentrations. [ABSTRACT FROM AUTHOR]

Molybdenum oxide (MoOx) is attractive for applications as hole‐selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoOx stacked on intrinsic amorphous silicon (i)a‐Si:H layer usually exhibits some issues that are still not fully solved resulting in degradation of electrical properties. Here, we propose a novel approach to enhance the electrical properties of (i)a‐Si:H/MoOx contact. We manipulate the (i)a‐Si:H interface via plasma treatment (PT) before MoOx deposition minimizing the electrical degradation without harming the optical response. Furthermore, by applying the optimized PT, we can reduce the MoOx thickness down to 3.5 nm with both open‐circuit voltage and fill factor improvements. Our findings suggest that the PT mitigates the decrease of the effective work function of the MoOx (WFMoOx) thin layer when deposited on (i)a‐Si:H. To support our hypothesis, we carry out electrical simulations inserting a dipole at the (i)a‐Si:H/MoOx interface accounting the attenuation of WFMoOx caused by both MoOx thickness and dipole. Our calculations confirm the experimental trends and thus provide deep insight in critical transport issues. Temperature‐dependent J‐V measurements demonstrate that the use of PT improves the energy alignment for an efficient hole transport. [ABSTRACT FROM AUTHOR]

An interdigitated back‐contacted (IBC) configuration is proposed for submicron copper indium gallium (di)selenide (CIGS). In a modelling platform, the structure was opto‐electrically optimized for maximum efficiency. The results are compared with a reference front/back‐contacted (FBC) solar cell with similar absorber thickness and exhibiting 11.9% efficiency. The electrical passivation at the front side is accomplished by an Al2O3 layer, which is endowed with negative fixed charges. The results indicate that with an optimal geometry and engineered bandgap grading, the efficiency of the new IBC structure can reach 17%. Additionally, with a reasonably low defect density in the absorber layer, efficiencies as high as 19.7% and open‐circuit voltage comparable with that of the record solar cell are possible with the IBC structure. [ABSTRACT FROM AUTHOR]

The contact resistivity is a key parameter to reach high conversion efficiency in solar cells, especially in architectures based on the so‐called carrier‐selective contacts. The importance of contact resistivity relies on the evaluation of the quality of charge collection from the absorber bulk through adjacent electrodes. The electrode usually consists of a stack of layers entailing complex charge transport processes. This is especially the case of silicon heterojunction (SHJ) contacts. Although it is known that in thin‐film silicon, the transport is based on subgap energy states, the mechanisms of charge collection in SHJ systems is not fully understood yet. Here, we analyse the physical mechanisms driving the exchange of charge among SHJ layers with the support of rigorous numerical simulations that reasonably replicate experimental results. We observe a connection between recombination and collection of carriers. Simulation results reveal that charge transport depends on the alignment and the nature of energy states at heterointerfaces. Our results demonstrate that transport based on direct energy transitions is more efficient than transport based on subgap energy states. Particularly, for positive charge collection, energy states associated to dangling bonds support the charge exchange more efficiently than tail states. The conditions for optimal carrier collection rely on the Fermi energy of the layers, in terms of activation energy of doped layers and carrier concentration of transparent conductive oxide. We observe that fill factor (FF) above 86% concurrently with 750‐mV open circuit voltage can be attained in SHJ solar cells with ρc lower than 45 mΩ·cm2 for p‐contact and 20 mΩ·cm2 for the n‐contact. Furthermore, for achieving optimal contact resistivity, we provide engineering guidelines that are valid for a wide range of silicon materials from amorphous to nanocrystalline layers. [ABSTRACT FROM AUTHOR]

This work presents the concept of a photovoltaic (PV)‐powered solar chimney. We modeled and experimentally studied the integration of a PV system within a naturally ventilated façade (NVF), attempting to use the inherent cavity as a ventilation channel to transfer heat. Thermodynamic models were created to study the thermal and, therefore, the electrical performance of a PV system installed at different positions within the cavity of the NVF. An experimental setup of the PV chimney was manufactured to validate the computational models. Results show low root mean square error (RMSE) values for the prediction of the mass flow and the temperature of the different materials considered in the chimney. A basic sensitivity analysis was performed to find the best position of the PV modules within the chimney for a three‐story household in the Netherlands. Optimization showed that with a cavity depth of 0.2 m with PV modules located at the front layer, the electric annual yield is maximized. For the same cavity depth, placing the modules in the middle significantly increases heat flow production, albeit with a reduction on electrical performance. [ABSTRACT FROM AUTHOR]

Hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H) layers exhibit promising optoelectrical properties for carrier‐selective‐contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c‐Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a‐Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc‐SiOx:H layers. Using plasma‐enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n‐ and p‐contact, respectively. We observe that interface treatments after (i)a‐Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c‐Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back‐contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc‐SiOx:H is demonstrated by averagely 1.5 mA/cm2 higher short‐circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a‐Si:H. [ABSTRACT FROM AUTHOR]

In this work, we develop SiOx/poly‐Si carrier‐selective contacts grown by low‐pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly‐Si in a wide range (20‐250 nm). Dose and energy of implantation as well as temperature and time of annealing were optimized, achieving implied open‐circuit voltage well above 700 mV for electron‐selective contacts regardless the poly‐Si layer thickness. In case of hole‐selective contacts, the passivation quality decreases by thinning the poly‐Si layer. For both poly‐Si doping types, forming gas annealing helps to augment the passivation quality. The optimized doped poly‐Si layers are then implemented in c‐Si solar cells featuring SiO2/poly‐Si contacts with different polarities on both front and rear sides in a lean manufacturing process free from transparent conductive oxide (TCO). At cell level, open‐circuit voltage degrades when thinner p‐type poly‐Si layer is employed, while a consistent gain in short circuit current is measured when front poly‐Si thickness is thinned down from 250 to 35 nm (up to +4 mA/cm2). We circumvent this limitation by decoupling front and rear layer thickness obtaining, on one hand, reasonably high current (JSC‐EQE = 38.2 mA/cm2) and, on the other hand, relatively high VOC of approximately 690 mV. The best TCO‐free device using Ti‐seeded Cu‐plated front contact exhibits a fill factor of 75.2% and conversion efficiency of 19.6%. [ABSTRACT FROM AUTHOR]

N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc‐SiC:H(n) on tunnel oxide (SiO2)–passivated c‐Si with an implied open‐circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc‐SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc‐SiC:H(n) and 0.62 mA/cm2 with MgF2/μc‐SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc‐SiC:H(n)/SiO2/c‐Si as front side layer stack in an IBC solar cell reveal a short‐circuit current density of 42.2 mA/cm2, an open‐circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%. [ABSTRACT FROM AUTHOR]

Interdigitated back contact (IBC) crystalline silicon (c-Si) solar cells are attracting a lot of attention because of their capability to reach world record conversion efficiency. Because of the relatively complex contact pattern, their design and optimization typically require advanced numerical simulation tools. In this work, a TCAD-based simulation platform has been developed to account accurately and in detail the optical and passivation mechanisms of front texturization. Its validation has been carried out with respect to a novel homo-junction IBC c-Si solar cell based on ion implantation and epitaxial growth, comparing measured and simulated reflectance, transmittance, internal quantum efficiency, external quantum efficiency spectra, and current density-voltage characteristics. As a result of the calibration process, the opto-electrical losses of the investigated device have been identified quantitatively and qualitatively. Then, an optimization study about the optimal front surface field (FSF) doping, front-side texturing morphology, and rear side geometry has been performed. The proposed simulation platform can be potentially deployed to model other solar cell architectures than homo-junction IBC devices (e.g., passivated emitter rear cell, passivated emitter rear locally diffused cell, hetero-IBC cell). Simulation results show that a not-smoothed pyramid-textured front interface and an optimal FSF doping are mandatory to minimize both the optical and the recombination losses in the considered IBC cell and, consequently, to maximize the conversion efficiency. Similarly, it has been showed that recombination losses are affected more by the doping profile rather than the surface smoothing. Moreover, the performed investigation reveals that the optimal FSF doping is almost independent from the front texturing morphology and FSF passivation quality. According to this result, it has been demonstrated that an IBC cell featuring an optimal FSF doping does not exhibit a significant efficiency improvement when the FSF passivation quality strongly improves, proving that IBC cell designs based on low-doped FSF require a very outstanding passivation quality to be competitive. Deploying an optimization algorithm, the adoption of an optimized rear side geometry can potentially lead to an efficiency improvement of about 1%abs as compared with the reference IBC solar cell. Further, by improving both emitter and c-Si bulk quality, a 22.84% efficient solar cell for 280-μm thick c-Si bulk was simulated. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

The front-side reflection represents a significant optical loss in solar cells. One way to minimize this optical loss is to nano-texture the front surface. Although nano-textured surfaces have shown a broad-band anti-reflective effect, their light scattering and surface passivation properties are found to be generally worse than those of standard micro-textured surfaces. To overcome these setbacks in crystalline silicon solar cells, advanced texturing and passivation approaches are here presented. In the first approach, we propose a modulated surface texture by superimposing nano-cones on micro-pyramidal surface texture. This advanced texture applied at the front side of crystalline silicon wafers completely suppresses the reflection in a broad wavelength range from 300 nm up to 1000 nm and efficiently scatters light up to 1200 nm. In the second approach, we show a method to minimize recombination at nano-textured surfaces by using defect-removal etching followed by dry thermal oxidation. These two approaches are applied here in an interdigitated back-contacted crystalline silicon solar cell and result in decoupling of the interplay between the mechanisms behind short-circuit current density and open-circuit voltage. The device exhibits a conversion efficiency equal to 19.8%, record external quantum efficiency (78%) at short wavelengths (300 nm), and electrical performance equal to the performance of the reference interdigitated back-contacted device based on front-side micro-pyramids. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

In this paper, we present a novel way of texturing glass facilitated by ZnO:Al thin film as sacrificial layer for thin film silicon solar cell application. We name this technique zinc oxide-induced texturing (ZIT). The texturing of glass was achieved by wet etching of ZnO:Al covered glass with HF and HNO3 as etchants. We investigated the influence of the ZnO:Al layer sputtering condition, the layer thickness, and the etchant composition on the surface morphology of the textured glass. We demonstrate that we are able to control the roughness of the ZIT glass over a wide roughness range, ranging from 20 to 400 nm. Highly efficient microcrystalline silicon n-i-p solar cells were deposited on ZIT glass. The influence of the substrate morphology on the solar cell performance is also discussed. The highest efficiency for a single junction n-i-p microcrystalline silicon solar cell obtained in this work is 10.64% (Active area). Copyright © 2014 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

To further increase the efficiency of multijunction thin-film silicon (TF-Si) solar cells, it is crucial for the front electrode to have a good transparency and conduction, to provide efficient light trapping for each subcell, and to ensure a suitable morphology for the growth of high-quality silicon layers. Here, we present the implementation of highly transparent modulated surface textured (MST) front electrodes as light-trapping structures in multijunction TF-Si solar cells. The MST substrates comprise a micro-textured glass, a thin layer of hydrogenated indium oxide (IOH), and a sub-micron nano-textured ZnO layer grown by low-pressure chemical vapor deposition (LPCVD ZnO). The bilayer IOH/LPCVD ZnO stack guarantees efficient light in-coupling and light trapping for the top amorphous silicon (a-Si:H) solar cell while minimizing the parasitic absorption losses. The crater-shaped micro-textured glass provides both efficient light trapping in the red and infrared wavelength range and a suitable morphology for the growth of high-quality nanocrystalline silicon (nc-Si:H) layers. Thanks to the efficient light trapping for the individual subcells and suitable morphology for the growth of high-quality silicon layers, multijunction solar cells deposited on MST substrates have a higher efficiency than those on single-textured state-of-the-art LPCVD ZnO substrates. Efficiencies of 14.8% (initial) and 12.5% (stable) have been achieved for a-Si:H/nc-Si:H tandem solar cells with the MST front electrode, surpassing efficiencies obtained on state-of-the-art LPCVD ZnO, thereby highlighting the high potential of MST front electrodes for high-efficiency multijunction solar cells. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

ABSTRACT The flattened light-scattering substrate (FLiSS) is formed by a combination of two materials with a high refractive index mismatch, and it has a flat surface. A specific realization of this concept is a flattened two-dimensional grating. When applied as a substrate for thin-film silicon solar cells in the nip configuration, it is capable to reflect light with a high fraction of diffused component. Furthermore, the FLiSS is an ideal substrate for growing high-quality microcrystalline silicon (µc-Si:H), used as bottom cell absorber layer in most of multijunction solar cell architectures. FLiSS is a three-dimensional structure; therefore, a full-wave analysis of the electromagnetic field is necessary for its optimal implementation. Using finite element method, different shapes, materials, and geometrical parameters were investigated to obtain an optimized FLiSS. The application of the optimized FLiSS in µc-Si:H single junction nip cell (1-µm-thick i-layer) resulted in a 27.4-mA/cm2 implied photocurrent density. The absorptance of µc-Si:H absorber exceeded the theoretical Yablonovitch limit for wavelengths larger than 750 nm. Double and triple junction nip solar cells on optimal FLiSS and with thin absorber layers were simulated. Results were in line with state-of-the-art optical performance typical of solar cells with rough interfaces. After the optical optimization, a study of electrical performance was carried out by simulating current-voltage characteristics of nip solar cells on optimized FLiSS. Potential conversion efficiencies of 11.6%, 14.2%, and 16.0% for single, double, and triple junction solar cells with flat interfaces, respectively, were achieved. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

ABSTRACT An effective rigorous 3-D optical modeling of thin-film silicon solar cells based on finite element method (FEM) is presented. The simulation of a flat single junction thin-film silicon solar cell on thick glass (i.e., superstrate configuration) is used to validate a commercial FEM-based package, the High Frequency Structure Simulator (HFSS). The results are compared with those of the reference software, Advanced Semiconductor Analysis (ASA) program, proving that the HFSS is capable of correctly handling glass as an incident material within very timely, short, and numerically stable calculations. By using the HFSS, we simulated single junction thin-film silicon solar cells on glass substrates textured with one-dimensional (1-D) and two-dimensional (2-D) trapezoid-shaped diffraction gratings. The correctness of the computed results, with respect to an actual device, is discussed, and the impact of different polarizations on spectral response and optical losses is examined. From the simulations carried out, optimal combinations for period and height in both 1-D and 2-D grating configurations can be indicated, leading to short-circuit current percentage increase with respect to a flat cell of, respectively, 25.46% and 32.53%. With very limited computer memory usage and computational time in the order of tens of minutes for a single simulation, we promote the usage of 3-D FEM as a rigorous and efficient way to simulate thin-film silicon solar cells. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]