1. Ground state of the Si(001) surface revisited?is seeing believing?
- Author
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Uda, T., Shigekawa, H., Sugawara, Y., Mizuno, S., Tochihara, H., Yamashita, Y., Yoshinobu, J., Nakatsuji, Kan, Kawai, H., and Komori, F.
- Subjects
Surface (mathematics) ,Low-energy electron diffraction ,Condensed matter physics ,Silicon ,Dimer ,chemistry.chemical_element ,Germanium ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter Physics ,Surfaces, Coatings and Films ,law.invention ,Tunnel effect ,Crystallography ,chemistry.chemical_compound ,chemistry ,law ,Scanning tunneling microscope ,Ground state - Abstract
The stable structure of clean Si(0 0 1) surface around 100 K is the c(4 × 2) arrangement constructed by buckled dimers. This structure was widely accepted as the ground state in 1990’s. The view was challenged at the beginning of 2000’s by the observations of a p(2 × 1) structure below 20 K with scanning tunneling microscopy (STM). Recent experimental studies confirm that the dimer is buckled below 30 K. Large tip–surface interaction, and/or tunneling current induced dynamical effect are now experimentally evident in the STM images at low temperatures. Moreover, a current induced structure transformation is discovered below 40 K even in the study by low energy electron diffraction. Dynamical electronic and vibrational effects are theoretically studied for accounting the observation of a p(2 × 1) structure below 20 K.
- Published
- 2004
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