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12 results on '"Nikolaev D"'

11. Saturation of light - current characteristics of high-power lasers (? = 1.0 - 1.1 mm) in pulsed regime

Author

Veselov, D A, Kapitonov, V A, Pikhtin, N A, Lyutetskiy, A V, Nikolaev, D N, Slipchenko, S O, Sokolova, Z N, Shamakhov, V V, Shashkin, I S, and Tarasov, I S

Abstract

Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range 1.0 - 1.1 um are studied. It is found that the intensity of spontaneous emission from the active region increases with increasing pump current above the lasing threshold and that this is caused by a growth in the concentration of charge carriers in the active region due to the modal gain enhancement needed to compensate for the growing internal optical loss at high pulsed pump currents. It is shown that the increase in the internal optical loss with increasing pulsed pump current is one of the main reasons for saturation of the light - current characteristics of high-power semiconductor lasers.

Published
2014

12. Preparation and study of epitaxial Cr4+: GGG films for passive Qswitches in neodymium lasers

Author

Bufetova, G A, Gusev, M Yu, Ivanov, I A, Nikolaev, D A, Seregin, V F, Tsvetkov, V B, and Shcherbakov, Ivan A

Abstract

The efficient technology is developed for growing Cr- and Ca-doped gadolinium—gallium garnet single-crystal films of thickness up to 100 μm on large substrates (76 mm) by the method of liquid-phase epitaxy from a solution—melt. The dependences of the absorption spectra of films and optical losses at 1 μm on the growth conditions and the solution—melt composition are studied. It is shown that Cr4+ions are formed in the films, and these films can be used as passive Qswitches in lasers.

Published
2006
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