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Copper single crystals were implanted off-axis at room temperature with carbon, neon, argon and xenon ions having energies ranging from 50 to 150 keV. Deep radiation damage was observed by α-particle channelling in a backscattering geometry. The total damage range was found to depend primarily on the ion energy, whereas the influence of the atomic number of the ion was significant only with xenon.

The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurements of other ions in silicon. However a considerable discrepancy exists between various theoretical predictions and the measured projected ranges. This discrepancy is attributed to inaccuracies in the theories in the low energy region.

Energy loss and straggling for protons, deuterons and α-particles in thin gold foils were measured by the indirect transmission technique. The measured stopping powers of the hydrogen ions agree reasonably well with the semi-empirical values of Andersen and Ziegler. The measured stopping powers for the helium ions are between 4% and 12% higher than the semi-empirical values of Ziegler. Stopping ratios of the He and hydrogen ions for the same target foils are slightly higher than Ziegler's master curve. The straggling values are energy independent above 0.4 MeV/amu. The hydrogen values are about 20 % lower than the Bohr estimate, while the straggling of the helium ions tend to reach the Bohr value at energies above 0.4 MeV/amu.