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CO2 reduction with water and light illumination is realized using a nitride (InxGa1-xN) photoelectrode that separates pairs of electrons and holes, thereby driving oxidation and reduction reactions. InxGa1-xN is a promising material for photocatalysis due to its tuneable band gap and excellent optical properties. However, little research has been done on the effect of In contents on CO2 reduction in InxGa1-xN. In this work, the photocatalytic performance of different In contents of InxGa1-xN photoanodes and the electrode's corrosivity in the process of artificial photosynthesis were studied. We found that the photoanode containing 0.9% In enhanced the conversion to CO, CH4, C2H4, and C2H6. Our photoluminescence spectroscopy, scanning electron microscopy, and X-ray diffraction results suggested that photo-corrosion occurs on the photoanode's surface at the end of the reaction. [ABSTRACT FROM AUTHOR]

In Fig. 5(b), The In0.009GaN0.0991/GaN should be changed to In0.071 GaN0.0929/GaN. The author apologizes for this error. [ABSTRACT FROM AUTHOR]