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Your search keyword '"Hyun-Seop Kim"' showing total 2 results
Start Over Author "Hyun-Seop Kim" Journal results in physics
2 results on '"Hyun-Seop Kim"'

1. SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Author

Hyun-Seop Kim, Kwang-Seok Seo, Jungwoo Oh, and Ho-Young Cha

Subjects
Physics, QC1-999
Abstract

In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

Published
2018
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2. GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation

Author

Su-Keun Eom, Kwang-Suk Seo, Myoung-Jin Kang, Sang-Woo Han, Hyun-Seop Kim, and Ho-Young Cha

Subjects
010302 applied physics, Materials science, Subthreshold conduction, business.industry, Transistor, General Physics and Astronomy, Gallium nitride, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Subthreshold slope, lcsh:QC1-999, law.invention, chemistry.chemical_compound, Atomic layer deposition, chemistry, law, 0103 physical sciences, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, lcsh:Physics, Negative impedance converter
Abstract

We demonstrated gallium nitride (GaN) based negative capacitance field-effect transistors (NCFETs) that achieve steep switching operation. Ferroelectric phase characteristics were successfully demonstrated using a 10 nm thick undoped-HfO2 ferroelectric thin film fabricated through atomic layer deposition. The HfO2 metal-ferroelectric-metal (MFM) capacitor was connected in series with the gate electrode of a recessed normally-off AlGaN/GaN MOS-HFET. The forward/reverse subthreshold slopes were dramatically reduced from 104/105 to 22/23 mV/dec.

Published
2020

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