1. A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.
- Author
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De Matteis, M., De Blasi, M., Vallicelli, E. A., Zannoni, M., Gervasi, M., Bau, A., Passerini, A., and Baschirotto, A.
- Subjects
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COMPLEMENTARY metal oxide semiconductors , *INTEGRATED circuits , *MODULATION-doped field-effect transistors , *AUTOMATIC control equipment , *LOW noise amplifiers - Abstract
This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a twochip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stableLNAs characterization, switchingon, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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