1. Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal
- Author
-
Tuqeer Nasir, Sudong Chae, Bum Jun Kim, Seungbae Oh, Kwan-Woo Kim, Hyung Kyu Lim, Sang Hoon Lee, Byung Joo Jeong, Hak Ki Yu, Ik Jun Choi, Linlin Chi, Jae-Hyun Lee, Kyung Hwan Choi, Jae-Young Choi, and Sang-Hwa Hyun
- Subjects
Materials science ,business.industry ,General Chemical Engineering ,Niobium ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Nanomaterials ,symbols.namesake ,Semiconductor ,chemistry ,symbols ,Optoelectronics ,Field-effect transistor ,Work function ,van der Waals force ,0210 nano-technology ,business ,Single crystal ,Nanoscopic scale - Abstract
A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.
- Published
- 2018
- Full Text
- View/download PDF