Search

The radiation spectra of the RF discharge plasma of dichlorodifluoromethane during copper etching are obtained and analyzed. It is shown that radiation of the RF discharge plasma is represented by atomic and molecular components and it is assumed that the dependences of the intensities of the lines and bands on the external discharge conditions are determined by the excitation of the emissive states on direct electron impact. Moreover, their behavior agrees with the character of the dependences of the etching rate under the same conditions. [ABSTRACT FROM AUTHOR]

High-frequency discharge plasma in halogen-containing gases is widely used in micro- and nanoelectronic technology for cleaning and dry etching the surface of semiconductor wafers and IC functional layers. In this paper, we study the surface quality (based on roughness data) of a semiconductor after plasma-chemical etching in R-23 freon plasma. Freon R-23 is widely used in the technology of etching Si, Ge, and a number of other materials (GaAs, GaP, InP), providing technologically acceptable interaction rates, and also satisfying the anisotropy and selectivity requirements. Nevertheless, the quality control of the surface of IC layers remains an urgent task of modern submicron electronics. [ABSTRACT FROM AUTHOR]

Chlorine-containing plasma and its mixtures with molecular and inert gases, as well as plasmas of complex polyatomic gases, such as freons, are often used to form the topology on the surface of semiconductors. This article examines the surface quality (based on the roughness data) of the semiconductor structure of GaAs after plasma-chemical etching in the plasma of mixtures of HCl/Ar, HCl/Cl2, and HCl/H2, as well as R-12 freon and its mixture with argon. Freon R-12 is often used for etching Si, Ge, and a number of other materials (GaAs, GaP, InP), providing technologically acceptable interaction rates, and also meets the requirements for anisotropy and selectivity. Also, mixtures of active gases with inert (He, Ar) gases have become widespread, which can act both as simply diluent gases and as sources of ions for the ion bombardment of the sample for the further ionic stimulation of the desorption of the interaction products, which improves the functional properties surface, with a slight decrease in the speed of interaction. Nevertheless, controlling the surface quality of samples remains an urgent task in modern electronics. [ABSTRACT FROM AUTHOR]