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Your search keyword '"Gamkrelidze, A."' showing total 12 results
Start Over Author "Gamkrelidze, A." Journal russian microelectronics
12 results on '"Gamkrelidze, A."'

8. Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates

Author

A. V. Zuev, N. V. Shavruk, R. R. Galiev, A. Yu. Pavlov, O. S. Matveenko, M. V. Maitama, K. N. Tomosh, Yu. V. Fedorov, S. A. Gamkrelidze, A. S. Bugaev, and D. L. Gnatyuk

Subjects
Materials science, Silicon, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, Integrated circuit, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Materials Chemistry, Ka band, Electronics, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business, Microwave
Abstract

For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the obtained microcircuits are presented.

Published
2021

9. Microconsuming 8–12 GHz GaN Power Amplifiers

Author

D. L. Gnatyuk, A. O. Mikhalev, S. A. Gamkrelidze, M. V. Maitama, Yu. V. Fedorov, A. V. Zuev, and P. P. Maltsev

Subjects
010302 applied physics, Materials science, Spacecraft, business.industry, Amplifier, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Chip, 01 natural sciences, Electronic, Optical and Magnetic Materials, Power (physics), chemistry.chemical_compound, chemistry, Cascade, 0103 physical sciences, Materials Chemistry, Silicon carbide, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.

Published
2019

10. Stability of Nitride Microwave Monolytic ICs of a Signal Converter Irradiated by Neutrons and Gamma Radiation

Author

S. S. Arutyunyan, D. V. Lavrukhin, K. A. Kagirin, S. A. Gamkrelidze, and N. E. Ivanova

Subjects
Materials science, 010308 nuclear & particles physics, business.industry, 02 engineering and technology, High-electron-mobility transistor, Nitride, Radiation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Acceptor, Electronic, Optical and Magnetic Materials, Absorbed dose, 0103 physical sciences, Materials Chemistry, Optoelectronics, Neutron, Irradiation, Electrical and Electronic Engineering, 0210 nano-technology, business, Microwave
Abstract

The radiation stability of AlGaN/GaN HEMT millimeter-wave signal converters with highly mobile electrons irradiated by neutron and gamma radiation is investigated. The following characteristics have been chosen as the parameters for estimating the stability: the output microwave signal range, conversion factor, and the total consumed current. The consumed current dependence on the absorbed dose of gamma radiation and the sample temperature is determined. It is shown that the effect of neutron irradiation upon the characteristics is insignificant, although the gamma irradiation results in a considerable increase of the current consumed due to the formation of nitrogen donor vacancies, annealing of growth acceptor defects, and defect ordering. Six months later, the parameters of the devices returned to the initial values, indicating the restoration of the original state of the substrate’s crystal structure.

Published
2017

11. Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits

Author

S. A. Gamkrelidze, N. V. Shchavruk, and A. A. Trofimov

Subjects
Materials science, 02 engineering and technology, Integrated circuit, engineering.material, law.invention, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Wafer, Electrical and Electronic Engineering, Hardware_REGISTER-TRANSFER-LEVELIMPLEMENTATION, Monolithic microwave integrated circuit, business.industry, ComputingMilieux_PERSONALCOMPUTING, Diamond, 020206 networking & telecommunications, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, engineering, Optoelectronics, Wafer dicing, 0210 nano-technology, business, Microwave
Abstract

This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.

Published
2017

12. Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors

Author

Yu. V. Fedorov, O. A. Ruban, D. V. Lavrukhin, D. V. Gromov, K. A. Kagirina, A. V. Zuev, D. L. Gnatyuk, and S. A. Gamkrelidze

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Integrated circuit, Radiation, Converters, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Signal, Electronic, Optical and Magnetic Materials, law.invention, Condensed Matter::Materials Science, Semiconductor, law, 0103 physical sciences, Materials Chemistry, Optoelectronics, Neutron, Electronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Microwave
Abstract

The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.

Published
2017

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