1. MoS2 transistors with 1-nanometer gate lengths
- Author
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Desai, Sujay B, Madhvapathy, Surabhi R, Sachid, Angada B, Llinas, Juan Pablo, Wang, Qingxiao, Ahn, Geun Ho, Pitner, Gregory, Kim, Moon J, Bokor, Jeffrey, Hu, Chenming, Wong, H-S Philip, and Javey, Ali
- Subjects
Physical Sciences ,Engineering ,Nanotechnology ,Condensed Matter Physics ,General Science & Technology - Abstract
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
- Published
- 2016