1. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
- Author
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Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S, Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V, Read, Dan, Janotti, Anderson, and Palmstrøm, Chris J
- Subjects
Physical Sciences ,Condensed Matter Physics ,cond-mat.mtrl-sci ,cond-mat.mes-hall - Abstract
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
- Published
- 2021