Search

Your search keyword '"Zhengdao Xie"' showing total 1 results
Start Over Author "Zhengdao Xie" Journal science advances
1 results on '"Zhengdao Xie"'

1. Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.

Author

Jingli Wang, Lejuan Cai, Jiewei Chen, Xuyun Guo, Yuting Liu, Zichao Ma, Zhengdao Xie, Hao Huang, Mansun Chan, Ye Zhu, Lei Liao, Qiming Shao, and Yang Chai

Subjects
*METAL oxide semiconductor field-effect transistors, *SEMICONDUCTORS, *ORGANIC field-effect transistors, *VAN der Waals forces, *METAL semiconductor field-effect transistors, *ELECTRON energy loss spectroscopy, *DEBYE length
Abstract

The article focuses on dangling bond–free surface makes it extremely difficult to deposit gate dielectrics with high-quality interface in metal-oxide-semiconductor (MOS) field-effect transistors (FETs). It mentions ultrathin two-dimensional (2D) semiconductors are regarded as a potential channel material for low-power transistors with small subthreshold swing and low leakage current. It also mentions transferred metal gate (TMG) and back gate enable logic functions.

Published
2021
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results