Search

Tuning ferroelectricity of Hf0.5Zr0.5O2 is crucial for facilitating its practical applications in various fields, including in-memory and neuromorphic computing. Previous studies have revealed that the electrodes have a significant influence on ferroelectricity, and changing electrode materials can realize different but discrete ferroelectric polarization values. Here, we introduce an alloy-electrode method, in order to achieve gradual and accurate modulation of ferroelectric polarization, especially useful for matching the polarization charges at the interface of ferroelectric insulators and ferroelectric semiconductors. Au and W electrodes are chosen as baselines for realizing weak and strong ferroelectric polarization, where the intermediate states can be achieved by adjusting the ratio of metals in the Au-W alloy. To demonstrate the generality of this approach, the Cu-W alloy electrode is also realized for tuning ferroelectric polarization. The effect of alloy electrodes on device leakage current, endurance, and retention is evaluated. In addition, the temperature stability of ferroelectric capacitors is tested, where limited changes in both remnant polarization and coercive voltages are observed, showing the great potential of the ferroelectric hafnium oxide. Such gradual modulation of ferroelectric polarization could facilitate the application of Hf0.5Zr0.5O2 in in-memory and neuromorphic computing. [ABSTRACT FROM AUTHOR]