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This study evaluated the determinants of mortality and the T cell immune response in patients with persistent Staphylococcus aureus bacteremia (SAB). This was a prospective cohort study and patients with confirmed SAB were enrolled from 2008 to 2020. We compared clinical, microbiological, and genotypic features between surviving and deceased patients with persistent SAB. The concentrations of cytokines and the proportions of IFN-γ secreting CD4+ T cells were measured serially during the bacteremia period. Of the 1760 patients, 242 had persistent bacteremia (PB), and 49 PB patients died within 30 days. In the multivariate analysis, the APACHE II score and female sex were independently associated with 30 days mortality. The level of IL-10 was significantly increased in the plasma of patients with a high Pitt bacteremia score and those who died within 12 weeks from the index day. The proportion of IFN-γ-secreting CD4+ T cells were the highest just before the positive-to-negative conversion of blood cultures in patients with a low Pitt bacteremia score and those who survived for 12 weeks. The level of IL-10 is correlated with clinical outcomes in PB patients. IFN-γ secreting CD4+ T cells might play a pivotal role in SAB PB. [ABSTRACT FROM AUTHOR]

Glioblastoma (GBM) is a highly aggressive and deadly brain cancer. Temozolomide (TMZ) is the standard chemotherapeutic agent for GBM, but the majority of patients experience recurrence and invasion of tumor cells. We investigated whether TMZ treatment of GBM cells regulates matrix metalloproteinases (MMPs), which have the main function to promote tumor cell invasion. TMZ effectively killed GL261, U343, and U87MG cells at a concentration of 500 µM, and surviving cells upregulated MMP9 expression and its activity but not those of MMP2. TMZ also elevated levels of MMP9 mRNA and MMP9 promoter activity. Subcutaneous graft tumors survived from TMZ treatment also exhibited increased expression of MMP9 and enhanced gelatinolytic activity. TMZ-mediated MMP9 upregulation was specifically mediated through the phosphorylation of p38 and JNK. This then stimulates AP-1 activity through the upregulation of c-Fos and c-Jun. Inhibition of the p38, JNK, or both pathways counteracted the TMZ-induced upregulation of MMP9 and AP-1. This study proposes a potential adverse effect of TMZ treatment for GBM: upregulation of MMP9 expression potentially associated with increased invasion and poor prognosis. This study also provides valuable insights into the molecular mechanisms by which TMZ treatment leads to increased MMP9 expression in GBM cells. [ABSTRACT FROM AUTHOR]

In this multi-center, assessor-blinded pilot study, the diagnostic efficacy of cCeLL-Ex vivo, a second-generation confocal laser endomicroscopy (CLE), was compared against the gold standard frozen section analysis for intraoperative brain tumor diagnosis. The study was conducted across three tertiary medical institutions in the Republic of Korea. Biopsy samples from newly diagnosed brain tumor patients were categorized based on location and divided for permanent section analysis, frozen section analysis, and cCeLL-Ex vivo imaging. Of the 74 samples from 55 patients, the majority were from the tumor core (74.3%). cCeLL-Ex vivo exhibited a relatively higher diagnostic accuracy (89.2%) than frozen section analysis (86.5%), with both methods showing a sensitivity of 92.2%. cCeLL-Ex vivo also demonstrated higher specificity (70% vs. 50%), positive predictive value (PPV) (95.2% vs. 92.2%), and negative predictive value (NPV) (58.3% vs. 50%). Furthermore, the time from sample preparation to diagnosis was notably shorter with cCeLL-Ex vivo (13 min 17 s) compared to frozen section analysis (28 min 28 s) (p-value < 0.005). These findings underscore cCeLL-Ex vivo's potential as a supplementary tool for intraoperative brain tumor diagnosis, with future studies anticipated to further validate its clinical utility. [ABSTRACT FROM AUTHOR]

In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a double-gate (DG) structure was developed using an atomic layer deposition route. The device consisting of 10-nm-thick IGO channel and 2/48-nm-thick SiO2/HfO2 dielectric was designed to be suitable for a display backplane in augmented and virtual reality applications. The fabricated DG TFTs exhibit outstanding device performances with field-effect mobility (μFE) of 65.1 ± 2.3 cm2V−1 s−1, subthreshold swing of 65 ± 1 mVdec−1, and threshold voltage (VTH) of 0.42 ± 0.05 V. Both the (μFE) and SS are considerably improved by more than two-fold in the DG IGO TFTs compared to single-gate (SG) IGO TFTs. Important finding was that the DG mode of IGO TFTs exhibits the nearly temperature independent μFE variations in contrast to the SG mode which suffers from the severe remote Coulomb scattering. The rationale for this disparity is discussed in detail based on the potential distribution along the vertical direction using technology computer-aided design simulation. Furthermore, the DG IGO TFTs exhibit a greatly improved reliability with negligible VTH shift of − 0.22 V under a harsh negative bias thermal and illumination stress condition with an electric field of − 2 MVcm−1 and blue light illumination at 80 °C for 3600 s. It could be attributed to the increased electrostatic potential that results in fast re-trapping of the electrons generated by the light-induced ionization of deep level oxygen vacancy defects. [ABSTRACT FROM AUTHOR]