1. On-chip sub-terahertz surface plasmon polariton transmission lines in CMOS.
- Author
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Yuan Liang, Hao Yu, Hao Chi Zhang, Chang Yang, and Tie Jun Cui
- Subjects
- *
COMPLEMENTARY metal oxide semiconductors , *POLARITONS , *WIDE gap semiconductors , *ELECTRIC lines , *WAVELENGTHS - Abstract
A low-loss and low-crosstalk surface-wave transmission line (T-line) is demonstrated at sub-THz in CMOS. By introducing periodical sub-wavelength structures onto the metal transmission line, surface plasmon polaritons (SPP) are excited and propagate signals via a strongly localized surface wave. Two coupled SPP T-lines and two quasi-TEM T-lines are both fabricated on-chip, each with a separation distance of 2.4 µm using standard 65 nm CMOS technology. Measurement results show that the SPP T-lines achieve wideband reflection coefficient lower than --14 dB and crosstalk ratio better than --24 dB, which is 19 dB lower on average than the traditional T-lines from 220 --GHz to 325 GHz. The demonstrated compact and wideband SPP T-lines have shown great potential for future realization of highly dense on-chip sub-THz communications in CMOS. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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