Search

Your search keyword '"Lee, Dongjin"' showing total 5 results
Start Over Author "Lee, Dongjin" Journal scientific reports
5 results on '"Lee, Dongjin"'

1. Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications

Author

Otari, Sachin V., primary, Kumar, Manoj, additional, Anwar, Muhammad Zahid, additional, Thorat, Nanasaheb D., additional, Patel, Sanjay K. S., additional, Lee, Dongjin, additional, Lee, Jai Hyo, additional, Lee, Jung-Kul, additional, Kang, Yun Chan, additional, and Zhang, Liaoyuan, additional

Published
2017
Full Text
View/download PDF

2. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

Author

Heo, Sung, primary, Park, Hyoungsun, additional, Ko, Dong-Su, additional, Kim, Yong Su, additional, Kyoung, Yong Koo, additional, Lee, Hyung-Ik, additional, Cho, Eunae, additional, Lee, Hyo Sug, additional, Park, Gyung-Su, additional, Shin, Jai Kwang, additional, Lee, Dongjin, additional, Lee, Jieun, additional, Jung, Kyoungho, additional, Jeong, Moonyoung, additional, Yamada, Satoru, additional, Kang, Hee Jae, additional, and Choi, Byoung-Deog, additional

Published
2017
Full Text
View/download PDF

4. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling.

Author

Heo, Sung, Park, Hyoungsun, Ko, Dong-Su, Kim, Yong Su, Kyoung, Yong Koo, Lee, Hyung-Ik, Cho, Eunae, Lee, Hyo Sug, Park, Gyung-Su, Shin, Jai Kwang, Lee, Dongjin, Lee, Jieun, Jung, Kyoungho, Jeong, Moonyoung, Yamada, Satoru, Kang, Hee Jae, and Choi, Byoung-Deog

Abstract

We demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/(LaO or ZrO)/SiO2 stack structures. The VFB shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO2 interface layer. The metal doping and silicate formation confirmed by using transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) line profiling, respectively. The direct work function measurement technique allowed us to make direct estimate of a variety of flat band voltages (VFB). As a function of composition ratio of La or Zr to Ti in the region of a TiN/(LaO or ZrO)/SiO2/Si stack, direct work function modulation driven by La and Zr doping was confirmed with the work functions obtained from the cutoff value of secondary electron emission by auger electron spectroscopy (AES). We also suggested an analytical method to determine the interface dipole via work function depth profiling. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results