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Start Over Author "ZHANG Lisheng" Journal scientific reports
10 results on '"ZHANG Lisheng"'

7. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Author

Cheng, Jianpeng, primary, Yang, Xuelin, additional, Sang, Ling, additional, Guo, Lei, additional, Zhang, Jie, additional, Wang, Jiaming, additional, He, Chenguang, additional, Zhang, Lisheng, additional, Wang, Maojun, additional, Xu, Fujun, additional, Tang, Ning, additional, Qin, Zhixin, additional, Wang, Xinqiang, additional, and Shen, Bo, additional

Published
2016
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8. Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Author

Jiang, Shengxiang, primary, Feng, Yulong, additional, Chen, Zhizhong, additional, Zhang, Lisheng, additional, Jiang, Xianzhe, additional, Jiao, Qianqian, additional, Li, Junze, additional, Chen, Yifan, additional, Li, Dongsan, additional, Liu, Lijian, additional, Yu, Tongjun, additional, Shen, Bo, additional, and Zhang, Guoyi, additional

Published
2016
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10. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

Author

He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, and Shen, Bo

Subjects
EXCITON theory, QUANTUM wells, DOPING agents (Chemistry), BINDING energy, PHOTOLUMINESCENCE
Abstract

Free exciton (FX) and bound exciton (BX) in Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX in undoped sample, and 63.6 meV for the BX in Si-doped (2 × 1018 cm−3) sample. They are attributed to O-bound and Si-bound excitons, respectively. The large binding energies of BX are assumed to originate from the strong quantum confinement in the quantum wells, which also leads to a stronger FX PL peak intensity in comparison with BX at 10 K. Si-doping is found to suppress the FX quenching by reducing threading dislocation density (TDD) in the well layers, leading to a significant improvement of IQE from 33.7% to 45%. [ABSTRACT FROM AUTHOR]

Published
2015
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