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Utilizing micromagnetic modeling, we have explained the unprobed characteristics of 360° full cycle in-plane magnetization rotation and the resulting propagation of a magnetization wave along a ferromagnet nanowire. The magnetization wave, which is generated by setting off spin oscillation at one end of a ferromagnetic strip, propagates till the end of the wire. A perpendicular spin torque oscillator (STO) could generate magnetization rotation at one end of the ferromagnetic strip that is also part of the STO. Our results demonstrate that the oscillation frequency of the spins along the wire maintains excellent fidelity while the spatial wavelength of the magnetic wave increases. The driving mechanism behind the propagation of the wave is found to be exchange-springs, which enables the propagation of the wave without the need for a 'carrier' force, such as spin-transfer torque (STT) or spin Hall effect (SHE). Furthermore, we demonstrate that the gradient of the exchange energy drives the magnetic wave forward, while the in and out of plane anisotropy fields govern the shape of spin oscillation trajectories along the wire. Additionally, we show that stopping the oscillation at the STO end causes the wave to cease propagation after relaxation, and altering the STO rotational chirality leads to merging and annihilating domain walls of opposite winding numbers. [ABSTRACT FROM AUTHOR]

Utilizing micromagnetic modeling, we have explained the unprobed characteristics of 360° full cycle in-plane magnetization rotation and the resulting propagation of a magnetization wave along a ferromagnet nanowire. The magnetization wave, which is generated by setting off spin oscillation at one end of a ferromagnetic strip, propagates till the end of the wire. A perpendicular spin torque oscillator (STO) could generate magnetization rotation at one end of the ferromagnetic strip that is also part of the STO. Our results demonstrate that the oscillation frequency of the spins along the wire maintains excellent fidelity while the spatial wavelength of the magnetic wave increases. The driving mechanism behind the propagation of the wave is found to be exchange-springs, which enables the propagation of the wave without the need for a 'carrier' force, such as spin-transfer torque (STT) or spin Hall effect (SHE). Furthermore, we demonstrate that the gradient of the exchange energy drives the magnetic wave forward, while the in and out of plane anisotropy fields govern the shape of spin oscillation trajectories along the wire. Additionally, we show that stopping the oscillation at the STO end causes the wave to cease propagation after relaxation, and altering the STO rotational chirality leads to merging and annihilating domain walls of opposite winding numbers. [ABSTRACT FROM AUTHOR]

In this paper, we present an experimental study of L10-FePt granular films with crystalline boron nitride (BN) grain boundary materials for heat assisted magnetic recording (HAMR). It is found that application of a RF substrate bias (VDC = -15 V) yields the formation of hexagonal boron nitride (h-BN) nanosheets in grain boundaries, facilitating the columnar growth of FePt grains during sputtering at high temperatures. The h-BN monolayers conform to the side surfaces of columnar FePt grains, completely encircling individual FePt grains. The resulting core–shell FePt-(h-BN) nanostructures appear to be highly promising for HAMR application. The high thermal stability of h-BN grain boundaries allows the deposition temperature to be as high as 650℃ such that high order parameters of FePt L10 phase have been obtained. For the fabricated FePt-(h-BN) thin film, excellent granular microstructure with FePt grains of 6.5 nm in diameter and 11.5 nm in height has been achieved along with good magnetic hysteresis properties. [ABSTRACT FROM AUTHOR]

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn't require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field. [ABSTRACT FROM AUTHOR]