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Studies of light-induced demagnetization started with the experiment performed by Beaupaire et al. on Ni. Here, we present theoretical predictions for X-ray induced demagnetization of nickel, with X-ray photon energies tuned to its M 3 and L 3 absorption edges. We show that the specific feature in the density of states in the d-band of Ni, i.e., a sharp peak located just above the Fermi level, strongly influences the change of the predicted magnetic signal, making it stronger than in the previously studied case of X-ray demagnetized cobalt. It impacts also the value of Curie temperature for Ni. We believe that this finding will inspire dedicated experiments investigating magnetic processes in X-ray irradiated nickel and cobalt. [ABSTRACT FROM AUTHOR]

In this report, we analyse X-ray induced damage of B4C-coated bilayer materials under various irradiation geometries, following the conditions of our experiment performed at the free-electron-laser facility SACLA. We start with the discussion of structural damage in solids and damage threshold doses for the experimental system components: B4C, SiC, Mo and Si. Later, we analyze the irradiation of the experimentally tested coated bilayer systems under two different incidence conditions of a linearly polarized X-ray pulse: (i) grazing incidence, and (ii) normal incidence, in order to compare quantitatively the effect of the pulse incidence on the radiation tolerance of both systems. For that purpose, we propose a simple theoretical model utilizing properties of hard X-ray propagation and absorption in irradiated materials and of the following electron transport. With this model, we overcome the bottleneck problem of large spatial scales, inaccessible for any existing first-principle-based simulation tools due to their computational limitations for large systems. Predictions for damage thresholds obtained with the model agree well with the available experimental data. In particular, they confirm that two coatings tested: 15 nm B4C/20 nm Mo on silicon wafer and 15 nm B4C/50 nm SiC on silicon wafer can sustain X-ray irradiation at the fluences up to ~10 μJ/μm2, when exposed to linearly polarized 10 keV X-ray pulse at a grazing incidence angle of 3 mrad. Below we present the corresponding theoretical analysis. Potential applications of our approach for design and radiation tolerance tests of multilayer components within X-ray free-electron-laser optics are indicated. [ABSTRACT FROM AUTHOR]