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To obtain epitaxial layers of A²B6 semiconductors with increased structural perfection from their own liquid phase, it has been proposed to use a technological process in which the synthesis temperature varies in such a manner that ensures a constant growth rate of layers during the whole process. The regularities of temperature variation with time for this process have been found on the basis of diffusion crystallization model. The developed model is realized by numerical methods and applied to description of the growth of cadmium telluride layers. Quantitative data on variations of synthesis temperature have been obtained, which can serve as a basis for choosing the temperature-time regimes of growth of cadmium telluride layers with a constant and required rate of solid phase formation. [ABSTRACT FROM AUTHOR]

In this work, the growth properties of Ge1-XSiX epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge1-XSiX changes after irradiation by accelerated electrons Φ = 5⋅1016 cm-2, and generated are surface defects which play the role of traps for change carriers. [ABSTRACT FROM AUTHOR]

We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb1-xMnxTe (0.01 ≤ ≤ x 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 μm, obtained by the method of molecular beam epitaxy on substrates BaF2 (III). [ABSTRACT FROM AUTHOR]