1. Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications.
- Author
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Meng-Chen Tsai, Chin-I Wang, Yen-Chang Chen, Yi-Ju Chen, Kai-Shin Li, Min-Cheng Chen, and Miin-Jang Chen
- Subjects
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FIELD-effect transistors , *BUFFER layers , *DIELECTRIC devices , *BAND gaps , *CRYSTAL grain boundaries - Abstract
The electrical characteristics of FinFETs with a crystalline ZrO2/Al2O3 buffer layer gate stack and a crystalline ZrO2 high-K dielectric single layer, along with different fin widths and gate lengths, are investigated. Compared with the FinFETs with a single layer of crystalline ZrO2 high-K dielectric, the gate stack comprising the crystalline ZrO2/Al2O3 buffer layer on FinFETs leads to the suppression of short channel effects in terms of a low drain induced barrier lowering, reduced threshold voltage roll-off, and improved subthreshold swing. The ON/OFF current ratio and gate leakage current of FinFETs are also improved by the crystalline ZrO2/Al2O3 buffer layer gate stack. The improvement of electrical characteristics is ascribed to the reduced interface state density and gate leakage as a result of the insertion of an Al2O3 buffer layer between ZrO2 and Si. The results demonstrate that the crystalline ZrO2/Al2O3 buffer layer structure is a promising high-K gate stack for next-generation nanoscale transistors. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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