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In this study, we present an optically tunable feedback field-effect transistor (FBFET) with two independent gates and a p+-i-n+ silicon nanowire. Because of the feedback operation, the FBFET features extremely steep switching characteristics with subthreshold swings <4 mV dec−1, and it can be reconfigured as a p- or n-type transistor by controlling the gate-voltage biases. When the FBFET is exposed to a He–Ne laser beam (λ = 633 nm), photogenerated carriers accumulate in the potential wells and reduce the potential-barrier height. The optically tunable feedback operation is attributed to the lowering of the potential barrier caused by the light. The triggering voltages can be modulated according to illumination, even when feedback is being provided. This optically tunable transistor with excellent switching characteristics opens up possibilities for application in future optoelectronic devices. [ABSTRACT FROM AUTHOR]

In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p+–i–n+ doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending. [ABSTRACT FROM AUTHOR]

In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles. [ABSTRACT FROM AUTHOR]

The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 µm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 µA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper. [ABSTRACT FROM AUTHOR]