1. TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates.
- Author
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L M Sorokin, A V Myasoedov, A E Kalmykov, D A Kirilenko, V N Bessolov, and S A Kukushkin
- Subjects
GALLIUM nitride films ,SILICON ,VAPOR phase epitaxial growth ,SILICON carbide ,CRYSTAL defects - Abstract
We present the results of a conventional and high-resolution electron microscopy investigation of thick (up to 15 μm) semipolar GaN layers grown on Si(001) offcut substrates with 3C-SiC and AlN buffer layers. GaN and AlN layers have been grown by chloride vapor phase epitaxy. The silicon carbide buffer layers were produced by a new method of solid-phase synthesis on 4 and 7° offcut Si(001) substrates. It is shown that the use of solid-phase synthesis for the formation of SiC layer allows one to grow a semipolar GaN layer. The asymmetrical defect structure of the semipolar layer is revealed. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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