1. Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities
- Author
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Dmitri S Arteev, Andrey F. Tsatsulnikov, Alexei V. Sakharov, W. V. Lundin, Evgenii V. Lutsenko, M. V. Rzheutski, and E. E. Zavarin
- Subjects
Materials science ,Condensed matter physics ,Ensemble forecasting ,Materials Chemistry ,State (functional analysis) ,Electrical and Electronic Engineering ,Dislocation ,Condensed Matter Physics ,Quantum well ,Electronic, Optical and Magnetic Materials - Abstract
The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).
- Published
- 2021
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