1. Sputter-deposited metal contacts for n-type GaN
- Author
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M. A. Awaah, H. P. Hall, and K. Das
- Subjects
Chemistry ,Band gap ,Analytical chemistry ,Thermionic emission ,Sputter deposition ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Sputtering ,Materials Chemistry ,Metal-induced gap states ,Electrical and Electronic Engineering ,Thin film ,Surface states ,Molecular beam epitaxy - Abstract
Sputter-deposited Au, Pt, Cr, Ni and Cu contacts for n-type GaN films were studied using current–voltage (I–V) and capacitance–voltage (C–V) measurements. These films were grown by molecular beam epitaxy (MBE), heteroepitaxially on the basal plane of sapphire. The contacts were non-ideally rectifying in nature. Assuming that the non-ideality was due to effects of series resistance and recombination current, a computer curve fitting procedure was employed that enabled the separation of these effects from the thermionic emission current, thereby permitting the calculation of the barrier height. An analysis of the results indicates that the barrier heights for metal contacts on GaN are determined by the difference between the metal and the semiconductor electronegativities and substantially influenced by metal induced gap states (MIGS)/sputtering damage induced surface states (SDISS). The concentration of metal induced gap states/sputtering induced damage states was determined to be approximately 2.7 × 1013 states cm−2 eV−1.
- Published
- 2003
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