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In this paper, the excitation of surface waves in the presence of interface charges is discussed. Interface charges affect the dispersion of surface waves, and therefore they can be used in various applications such as optical modulators, switches, sensors and filters. These waves can be superior to surface plasmon waves since they are not lossy. The lossless property is satisfied in a limited range of millimetre waves to far infrared.

In this paper, the effect of two-dimensional electron plasma formed on the surface of a semiconductor on the refraction phase of an optical beam is investigated. Both the density and effective mass of the surface state electrons can be controlled by a transverse electric field. While the surface density of electrons varies slowly with the applied field, their effective mass changes instantaneously. Therefore, a high bandwidth for the phase modulation can be obtained. It is expected that the device operates in the far-infrared region with a semiconductor as the base material. GaAs is one of the best candidates having both large dynamic range, and large ratio of free electron to the crystal effective mass. The device operates in a waveguide configuration, as discussed throughout the paper. The electron effective mass is found through quantum mechanical calculations, and the interaction with the incident light beam is treated classically. Finally, a waveguide light phase modulator is proposed.

In this article, a time-domain non-linear model is proposed for quantum dynamics of interface traps. This model includes the effects of thermoionic emission, combined with the drift and tunneling currents. The model is simplified for the case of interface traps of the directly bonded Silicon wafers, and linearized. Therefore, an equivalent electrical circuit is obtained being composed of two resistive and capacitive branches. The theory predicts a close spacing between the corresponding zero and pole in the frequency response of the system, being justified by experiment on directly bonded n- type Silicon wafers. The low frequency response to a square- wave is quite in agreement with the experiment. This method enables one to precisely measure the filling up time- constant of the interface traps through the falling electroncs from the conduction band, by measuring the frequency response of the interface.

The existence of an energy gap of graphene is vital as far as nano-electronic applications such as nano-transistors are concerned. In this paper, we present a method for introducing arbitrary energy gaps through breaking the symmetry point group of graphene. We investigate the tight-binding approximation for the dispersion of π and π* electronic bands in patterned graphene including up to five nearest neighbors. As we show by applying special defects in graphene structure, an energy gap appears at Dirac points and the effective mass of fermions also becomes a function of the number of defects per unit cell.