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New designs based on S0 Lamb modes in AlN thin layer resonating structures coupled with the implementation of structural elements in SiO2, are theoretically analyzed by the Finite Element Method (FEM). This study compares the typical characteristics of different interdigital transducer (IDTs) configurations, involving either a continuous SiO2 cap layer, or structured SiO2 elements, showing their performance in the usual terms of electromechanical coupling coefficient (K2), phase velocity, and temperature coefficient of frequency (TCF), by varying structural parameters and boundary conditions. This paper shows how to reach temperature-compensated, high-performance resonator structures based on ribbon-structured SiO2 capping. The addition of a thin diamond layer can also improve the velocity and electromechanical coupling coefficient, while keeping zero TCF and increasing the solidity of the membranes. Beyond the increase in performance allowed by such resonator configurations, their inherent structure shows additional benefits in terms of passivation, which makes them particularly relevant for sensing applications in stern environments.

Langasite crystals (LGS) are known for their exceptional piezoelectric properties at high temperatures up to 1000 °C and more. In this respect, many studies have been conducted in order to achieve surface acoustic wave (SAW) sensors based on LGS crystals dedicated to high-temperature operations. Operating temperatures of more than 1000 °C and 600 °C for wired and wireless sensors, respectively, have been reached. These outstanding performances have been obtained under an air atmosphere since LGS crystals are not stable in high-temperature conditions under a low-oxygen atmosphere due to their oxide nature. However, if the stability of bulk LGS crystals under a high-temperature air atmosphere is well established, the surface deterioration under such conditions has been hardly investigated, as most of the papers dedicated to LGS-based SAW sensors are essentially focused on the development of thin film electrodes that are able to withstand very elevated temperatures to be combined with LGS crystals. Yet, any surface modification of the substrate can dramatically change the performance of SAW sensors. Consequently, the aim of this paper is to study the stability of the LGS surface under a high-temperature air environment. To do so, LGS substrates have been annealed in an air atmosphere at temperatures between 800 and 1200 °C and for durations between one week and one month. The morphology, microstructure, and chemical composition of the LGS surface was examined before and after annealing treatments by numerous and complementary methods, while the surface acoustic properties have been probed by SAW measurements. These investigations reveal that depending on both the temperature and the annealing duration, many defects with a corolla-like shape appear at the surface of LGS crystals in high-temperature prolonged exposure in an air atmosphere. These defects are related to the formation of a new phase, likely an oxiapatite ternary compound, the chemical formula of which is La14GaxSi9−xO39−x/2. These defects are located on the surface and penetrate into the depth of the sample by no more than 1–2 microns. However, SAW measurements show that the surface acoustic properties are modified by the high-temperature exposure at a larger deepness of at least several tens of microns. These perturbations of the LGS surface acoustic properties could induce, in the case of LGS-based SAW sensors operating in the 434 MHz ISM band, temperature measurement errors around 10 °C.

Scandium aluminum nitride (ScxAl1-xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent tradeoff they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.

In this work, we present a two-dimensional Finite Element Method (2D-FEM) model implemented on a commercial software, COMSOL Multiphysics, that is used to predict the high temperature behavior of surface acoustic wave sensors based on layered structures. The model was validated by using a comparative study between experimental and simulated results. Here, surface acoustic wave (SAW) sensors consist in one-port synchronous resonators, based on the Pt/AlN/Sapphire structure and operating in the 2.45-GHz Industrial, scientific and medical (ISM) band. Experimental characterizations were carried out using a specific probe station that can perform calibrated measurements from room temperature to 500 °C. In our model, we consider a pre-validated set of physical constants of AlN and Sapphire and we take into account the existence of propagation losses in the studied structure. Our results show a very good agreement between the simulation and experiments in the full range of investigated temperatures, and for all key parameters of the SAW sensor such as insertion losses, resonance frequency, electromechanical factor of the structure (k2) and quality factor (Q). Our study shows that k2 increases with the temperature, while Q decreases. The resonance frequency variation with temperature shows a good linearity, which is very useful for temperature sensing applications. The measured value of the temperature coefficient of frequency (TCF) is equal to −38.6 ppm/°C, which is consistent with the numerical predictions.