1. Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at high temperature.
- Author
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Hu, Fanbing, Cheng, Lina, Fan, Shuyao, Xue, Xufeng, Liang, Yong, Lu, Minghui, and Wang, Wen
- Subjects
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ACOUSTIC surface wave devices , *PIEZOELECTRIC thin films , *HIGH temperatures , *ACOUSTIC surface waves , *STRAIN sensors , *MAGNETRON sputtering , *MAGNETRONS - Abstract
A new AlN film-based surface acoustic wave (SAW) device was explored for sensing strain at high temperature. AlN/metal/Si multilayer composite structure was proposed to construct the strain sensing chip, and the corresponding theoretical analysis on SAW propagation were performed by using finite element method (FEM). High-quality AlN piezoelectric thin-film was prepared by using magnetron sputtering on Si substrate, and Pt electrodes was then lithographically prepared to build the sensing chips with one-port resonator pattern operating at 607 MHz and 620 MHz. To compensate the temperature cross sensitivity and enhance the strain sensitivity, two sensing chips were positioned perpendicular on a ceramic package, then the differential frequency signal was extracted to evaluate the applied strain. A high-temperature strain testing platform was constructed to characterize the prepared strain sensor with orthometric structure, larger strain sensitivity of 0.84 ppm/ μ ε at 550 °C in the range 0 – 500 μ ε and excellent temperature stability of 0.624 ppm/°C at the temperature range of 20–600 °C were achieved successfully. [Display omitted] • High-quality AlN piezoelectric thin films and high-temperature electrodes prepared. • Orthometric dual-resonator SAW chip based on AlN/metal/Si multilayer structure proposed. • larger strain sensitivity of 0.84 ppm/ μ ε at 550 °C in the range 0 – 500 μ ε and excellent temperature stability of 0.624 ppm/°C at the temperature range of 20 – 600 °C were achieved successfully. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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