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In this paper, we present the fabrication of an efficient thin film temperature sensor utilizing chemical vapor deposited carbon nanotube (CNT) film as the sensing element on Si substrates, with diamond-like carbon (DLC):Ni as a catalyst in assisting CNT growth. The fabricated sensor showed good electrical response with change in temperature. Relative linear change in resistance of 18.4% for an increase in temperature from 22 °C to 200 °C was achieved. Various characterizing techniques, such as scanning electron microscopy (SEM) and Raman spectroscopy, were used to characterize the films. In an effort to study device performance, van der Pauw and Hall measurements were carried out to study the dependence of resistance on temperature and magnetic fields. Temperature coefficient of resistance of the sensor was calculated as 1.03 × 10−3/°C. All implications arising from the study are presented. The results establish the aptness of the as-grown CNT film to be used as an active sensing material in thin film temperature sensors. [ABSTRACT FROM AUTHOR]